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Journal of the Korean Physical Society

, Volume 73, Issue 5, pp 622–626 | Cite as

Thickness Dependence on the Magnetism in Mo-Capped Epitaxial Fe Films

  • Hyeonjun Kong
  • Eunyoung Ahn
  • Gowoon Kim
  • Sangkyun Ryu
  • Sungkyun Park
  • Hyoungjeen Jeen
  • Tae-Yeol Jeon
  • Younghak Kim
  • Jinhyung Cho
Article
  • 33 Downloads

Abstract

When magnetic metal films are oxidized, in many cases, their saturation magnetization values decrease. The importance of high magnetization is well-known because it is directly related to the maximum energy product. Thus, prevention of oxidation in magnetic metal films via capping is important not only for studying the magnetism in magnetic metal films but also for developing new packaging technology for such films. In this research, we successfully grow epitaxial (110) Fe films on (0001) Al2O3 substrates by using radio-frequency (RF) magnetron sputtering. We capped 10-nm-thick Mo layers on the Fe films to prevent oxidation. By varying the thickness of the films, we systematically observed the changes in both the coercivity and the saturation magnetization. Especially, when the film’s thickness was below 8.5 nm, the coercivity of the film started to decrease. We believe the drastic change in the coercivity appeared in the Fe films when the film’s thickness approached the critical domain size for a magnetic domain transition.

Keywords

Epitaxial metal thin films Magnetic domain transition Coercivity Saturation magnetization 

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References

  1. [1]
    P. Pillay and R. Krishnan, IEEE. Trans. Ind. Appl. 27, 986 (1991).CrossRefGoogle Scholar
  2. [2]
    P. Campbell, Permanent magnet materials and their application (Cambridge University Press, New York, 1996).Google Scholar
  3. [3]
    M. Chinchilla, S. Arnaltes and J. C. Burgos, IEEE Trans. Energy Convers. 21, 130 (2006).ADSCrossRefGoogle Scholar
  4. [4]
    J. T. Lim et al., J. Korea Phys. Soc. 66, 1908 (2015).ADSCrossRefGoogle Scholar
  5. [5]
    J. Küble, Phys. Lett. A 81, 81 (1981).CrossRefGoogle Scholar
  6. [6]
    Y. Sugita et al., J. Appl. Phys. 70, 5977 (1991).ADSCrossRefGoogle Scholar
  7. [7]
    Y. Jiang et al., Sci. Rep. 6, 812 (2016).Google Scholar
  8. [8]
    Y. Jiang et al., Phys. Rev. Appl. 6, 024013 (2016).ADSCrossRefGoogle Scholar
  9. [9]
    T. Ogi et al., J. Appl. Phys. 113, 164301 (2013).ADSCrossRefGoogle Scholar
  10. [10]
    J. S. Williams and J. M. Poate, Ion implantation and beam processing (Academic Press, 2014).Google Scholar
  11. [11]
    S. Cho, K. Park, D. Han and T. Nahm, J. Korea Phys. Soc. 59, 105 (2011).CrossRefGoogle Scholar
  12. [12]
    M-S. Kim and T-U. Nahm, J. Korea Phys. Soc. 55, 1582 (2009).ADSCrossRefGoogle Scholar
  13. [13]
    P. Tomaszewski, Golden book of phase transitions, (Wroclaw, 2002).Google Scholar
  14. [14]
    M. Bode et al., Appl. Phys. Lett. 84, 948 (2004).ADSCrossRefGoogle Scholar
  15. [15]
    B. A. Hamad and J. M. Khalifeh, J. Phys.: Condens. Matter 13, 573 (2001).ADSGoogle Scholar
  16. [16]
    G. S. Zakharova et al., Solid State Sci. 9, 1028 (2007).ADSCrossRefGoogle Scholar
  17. [17]
    M. A. Khilla, H. Mikhail, A. Abu-El Soud and Z. M. Hanafi, J. Phys. B 30, 1039 (1980).Google Scholar
  18. [18]
    L. A. J. Garvie and P. R. Buseck, Nature 396, 667 (1998).ADSCrossRefGoogle Scholar
  19. [19]
    D. G. Schlom et al., Annu. Rev. Mater. Sci. 37, 589 (2007).ADSCrossRefGoogle Scholar
  20. [20]
    S. Callori, C. Rehm, G. Causer, M. Kostylev and F. Klose, Metals 6, 125 (2016).CrossRefGoogle Scholar
  21. [21]
    M. H. Armbruster, J. Am. Chem. Soc. 65, 1043 (1943).CrossRefGoogle Scholar
  22. [22]
    R. Skomski, H-P. Oepen and J. Kirschner, Phys. Rev. B 58, 3223 (1998).ADSCrossRefGoogle Scholar
  23. [23]
    B. Kaplan and G. Gehring, J. Magn. Magn. Mater. 128, 111 (1993).ADSCrossRefGoogle Scholar
  24. [24]
    F. Porrati, Spatially varying magnetic anisotropies in ultrathin films (Martin Luther University, Halle-Wittenberg, 2002).Google Scholar

Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  • Hyeonjun Kong
    • 1
  • Eunyoung Ahn
    • 1
  • Gowoon Kim
    • 1
  • Sangkyun Ryu
    • 1
  • Sungkyun Park
    • 1
  • Hyoungjeen Jeen
    • 1
  • Tae-Yeol Jeon
    • 2
  • Younghak Kim
    • 2
  • Jinhyung Cho
    • 3
  1. 1.Department of PhysicsPusan National UniversityBusanKorea
  2. 2.Pohang Accelerator LaboratoryPohangKorea
  3. 3.Department of Physics EducationPusan National UniversityBusanKorea

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