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Journal of the Korean Physical Society

, Volume 73, Issue 12, pp 1895–1898 | Cite as

Investigation of X-ray-induced Defects on Metals and Silicon by Using Coincidence Doppler Broadening Positron Annihilation Spectroscopy

  • C. Y. LeeEmail author
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Abstract

The mechanical properties of Al, Ti, Fe, and Cu metals p-type Si, and n-type Si were investigated by using coincidence Doppler broadening (CDB) positron annihilation spectroscopy. The samples in this experiment were irradiated by using X-rays at generating powers for up to 9 kW. The data taken after the irradiation showed all the characteristic features predicted from defects with vacancies. The S parameter values of the metals were generally less than those of semiconductors such as p-type Si and n-type Si. The relationship between n-type Si and p-type Si were more affected when n-type Si rather than p-type Si was irradiated with X-rays.

Keywords

Positron annihilation spectroscopy X-ray irradiation Defects Metals Semiconductor 

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Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  1. 1.Department of PhysicsHannam UniversityDaejonKorea

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