Fabrication and Characterization of Cu3SbS4 Solar Cell with Cd-free Buffer
- 20 Downloads
We have grown famatinite Cu3SbS4 films by using sulfurization of Cu/Sb stack film. Sulfurization at 500 °C produced famatinite Cu3SbS4 phase, while 400 °C and 450 °C sulfurization exhibited unreacted and mixed phases. The fabricated Cu3SbS4 film showed S-deficiency, and secondary phase of Cu12Sb4S13. The secondary phase was confirmed by X-ray diffraction, Raman spectroscopy, photoluminescence and external quantum efficiency measurements. We have also fabricated solar cell in substrate type structure, ITO/ZnO/(Zn,Sn)O/Cu3SbS4/Mo/glass, where Cu3SbS4 was used as a absorber layer and (Zn,Sn)O was employed as a Cd-free buffer. Our best cell showed power conversion efficiency of 0.198%. Characterization results of Cu3SbS4 absorber indicates deep defect (due to S-deficiency) and low shunt resistance (due to Cu12Sb4S13 phase). Thus in order to improve the cell efficiency, it is required to grow high quality Cu3SbS4 film with no S-deficiency and no secondary phase.
KeywordsCu3SbS4 Secondary phase Defect Solar cell
Unable to display preview. Download preview PDF.
- N. D. Franzer, N. R. Paudel, C. Xiao and Y. Yan, in PVSC 2014. IEEE. 40th (2014), p. 2326.Google Scholar