Journal of the Korean Physical Society

, Volume 72, Issue 8, pp 925–929 | Cite as

Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite

  • Yongsu Kwak
  • Jonghyun Song
  • Jihwan Kim
  • Jinhee Kim


A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electronic properties of the 2-dimensional electron gas at the LAO/STO hetero-interface were not changed by covering LAO with PMMA following the Au top gate electrode. A split gate device was also fabricated to construct depletion mode by using a narrow constriction between the LAO/STO conduction interface. The depletion mode, as well as superconducting critical current, could be controlled by applying a split gate voltage. Noticeably, the superconducting critical current tended to decrease with decreasing the split gate voltage and finally became zero. These results indicate that a weak-linked Josephson junction can be constructed and destroyed by split gating. This observation opens the possibility of gate-voltage-adjustable quantum devices.


Top gating Split gating 2-DEGS Perovskite Hetero-interface 


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Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  • Yongsu Kwak
    • 1
  • Jonghyun Song
    • 1
  • Jihwan Kim
    • 2
  • Jinhee Kim
    • 2
  1. 1.Department of PhysicsChungnam National UniversityDaejeonKorea
  2. 2.Korea Research Institute of Standards and ScienceDaejeonKorea

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