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Journal of the Korean Physical Society

, Volume 72, Issue 8, pp 925–929 | Cite as

Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite

  • Yongsu Kwak
  • Jonghyun Song
  • Jihwan Kim
  • Jinhee Kim
Article
  • 65 Downloads

Abstract

A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electronic properties of the 2-dimensional electron gas at the LAO/STO hetero-interface were not changed by covering LAO with PMMA following the Au top gate electrode. A split gate device was also fabricated to construct depletion mode by using a narrow constriction between the LAO/STO conduction interface. The depletion mode, as well as superconducting critical current, could be controlled by applying a split gate voltage. Noticeably, the superconducting critical current tended to decrease with decreasing the split gate voltage and finally became zero. These results indicate that a weak-linked Josephson junction can be constructed and destroyed by split gating. This observation opens the possibility of gate-voltage-adjustable quantum devices.

Keywords

Top gating Split gating 2-DEGS Perovskite Hetero-interface 

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References

  1. [1]
    A. Ohtomo and H. Y. Hwang, Nature 427, 423 (2004).ADSCrossRefGoogle Scholar
  2. [2]
    N. Reyren et al., Science 317, 1196 (2007).ADSCrossRefGoogle Scholar
  3. [3]
    B. Kalisky, J. A. Bert, B. B. Klopfer, C. Bell, H. K. Sato, M. Hosoda, Y. Hikita, H. Y. Hwang and K. A. Moler, Nat. Commun. 3, 922 (2012).ADSCrossRefGoogle Scholar
  4. [4]
    D. A. Dikin, M. Mehta, C. W. Bark, C. M. Folkman, C. B. Eom and V. Chandrasekhar, AIP Conf. Proc. 1393, 347 (2011).Google Scholar
  5. [5]
    A. D. Caviglia, M. Gabay, S. Gariglio, N. Reyren, C. Cancellieri and J-M. Triscone, Phys. Rev. Lett. 104, 126803 (2010).ADSCrossRefGoogle Scholar
  6. [6]
    A. Joshua, S. Pecker, J. Ruhman, E. Altman and S. Ilani, Nat. Commun. 3, 1129 (2012).ADSCrossRefGoogle Scholar
  7. [7]
    A. Joshua, J. Ruhman, S. Pecker, E. Altman and S. Ilani, Proc. Natl. Acad. Sci. U. S. A. 110, 9633 (2013).ADSCrossRefGoogle Scholar
  8. [8]
    M. Hosoda, Y. Hikita, H. Y. Hwang and C. Bell, Appl. Phys. Lett. 103, 103507 (2013).ADSCrossRefGoogle Scholar
  9. [9]
    S. Goswami, E. Mulazimoglu, L. M. K. Van der Sypen and A. D. Caviglia, Nano Lett. 15, 2627 (2015).ADSCrossRefGoogle Scholar
  10. [10]
    N. Nakagawa, H. Y. Hwang and D. A. Muller, Nat. Mater. 5, 204 (2006).ADSCrossRefGoogle Scholar
  11. [11]
    J-W. Chang, J. Song, J. S. Lee, H. Noh, S. K. Seung, L. Baasandorj, S. G. Lee, Y-J. Doh and J. Kim, Appl. Phys. Express 6, 85201 (2013).CrossRefGoogle Scholar
  12. [12]
    B. J. Van Wees, H. Van Houten, C. W. J. Beenakker, J. G. Williamson, L. P. Kouwenhoven, D. Van Der Marel and C. T. Foxon, Phys. Rev. Lett. 60, 848 (1988).ADSCrossRefGoogle Scholar
  13. [13]
    P. D. Eerkes, W. G. van der Wiel and H. Hilgenkamp, Appl. Phys. Lett. 103, 201603 (2017).ADSCrossRefGoogle Scholar
  14. [14]
    C. Richter et al., Nature 502, 528 (2013).ADSCrossRefGoogle Scholar
  15. [15]
    C. W. J. Beenakker and H. van Houten, Phys. Rev. Lett. 66, 3056 (1991).ADSCrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2018

Authors and Affiliations

  • Yongsu Kwak
    • 1
  • Jonghyun Song
    • 1
  • Jihwan Kim
    • 2
  • Jinhee Kim
    • 2
  1. 1.Department of PhysicsChungnam National UniversityDaejeonKorea
  2. 2.Korea Research Institute of Standards and ScienceDaejeonKorea

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