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Journal of the Korean Physical Society

, Volume 71, Issue 10, pp 707–710 | Cite as

Effect of surface passivation on breakdown voltages of 4H-SiC Schottky barrier diodes

  • In Ho KangEmail author
  • Moon Kyong Na
  • Ogyun Seok
  • Jeong Hyun Moon
  • H. W. Kim
  • Sang Cheol Kim
  • Wook Bahng
  • Nam Kyun Kim
  • Him-Chan Park
  • Chang Heon Yang
Article

Abstract

In this paper, the effect of surface passivation on the breakdown voltage of 4H-SiC Schottky barrier diode (SBD) was investigated. The SBDs having various passivation structures were fabricated. The passivation layers consist of 2 different ones: (1) thermal oxide with a post oxidation annealing, or no oxide by removing the oxide, and (2) plasma-enhanced chemical vapor deposited (PECVD) oxide, phosphosilicate glass (PSG), or polyimide (PI). The results show that the SBD having a sacrificial oxide as 1st passivation layer and a PI as 2nd passivation layer exhibited lower leakage current by a factor of more than 2 for the reverse bias above 1000 V than the others and its breakdown voltage (VBR) was 2254 V, which corresponds to 93% VBR of a parallel-plane ideal device.

Keywords

4H-SiC Schottky barrier diode Passivation Breakdown voltage 

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References

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Copyright information

© The Korean Physical Society 2017

Authors and Affiliations

  • In Ho Kang
    • 1
    Email author
  • Moon Kyong Na
    • 1
  • Ogyun Seok
    • 1
  • Jeong Hyun Moon
    • 1
  • H. W. Kim
    • 1
  • Sang Cheol Kim
    • 1
  • Wook Bahng
    • 1
  • Nam Kyun Kim
    • 1
  • Him-Chan Park
    • 2
  • Chang Heon Yang
    • 3
  1. 1.Power Semiconductor Research CenterKorea Electrotechnology Research Institute (KERI)ChangwonKorea
  2. 2.Department of Electrical EngineeringKyungnam UniversityChangwonKorea
  3. 3.R&D teamMaple Semiconductors. Inc.PohangKorea

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