Journal of the Korean Physical Society

, Volume 69, Issue 7, pp 1263–1266 | Cite as

Irreversible change of electric conduction in ionic-liquid-gated (La,Sr)MnO3 thin films

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Abstract

We have investigated the ionic-liquid-gating effect on electric conduction in (La0.8Sr0.2)MnO3(LSMO) thin films. The gating effect is significant for the LSMO thin films grown at low oxygen partial pressures. We observed that the channel resistance of LSMO was altered only for a positive gating voltage, not for a negative one, mainly through the changes of mobility rather than the carrier density. The increased sheet resistance at positive voltage does not return to the original value even after the removal of gating voltage as well as the application of a negative voltage. Through the Mn 2p X-ray absorption, the increased resistance of LSMO after a positive voltage is found to be associated with the increase of the Mn3+ ions over Mn4+ ones. We proposed that oxygen vacancy and electrochemical reactions should play a role for the irreversible electric conduction in ionic-liquid-gated (La,Sr)MnO3 thin films.

Keywords

Ionic liquid (La,Sr)MnO3 thin films Irreversible electric conduction Oxygen vacancy Electrochemical reaction 
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References

  1. [1]
    M. Imada, A. Fujimori and Y. Tokura, Rev. Mod. Phys. 70, 1039 (1998).ADSCrossRefGoogle Scholar
  2. [2]
    C. Ahn et al, Rev. Mod. Phys. 78, 1185 (2006).ADSCrossRefGoogle Scholar
  3. [3]
    A. Urushibara, Y. Moritomo, T. Arima, A. Asamitsu, G. Kido and Y. Tokura, Phys. Rev. B 51, 14103 (1995).ADSCrossRefGoogle Scholar
  4. [4]
    J. H. Jung, K. H. Kim, T. W. Noh, E. J. Choi and J. Yu, Phys. Rev. B 57, R11043 (1998).ADSCrossRefGoogle Scholar
  5. [5]
    Y. Tomioka, Y. Okimoto, J. H. Jung, R. Kumai and Y. Tokura, Phys. Rev. B 68, 094417 (2003).ADSCrossRefGoogle Scholar
  6. [6]
    A. S. Dhoot, S. C. Wimbush, T. Benseman, J. L. MacManus-Driscoll, J. R. Cooper and R. H. Friend, Adv. Mater. 22, 2529 (2010).CrossRefGoogle Scholar
  7. [7]
    K. Ueno, S. Nakamura, H. Shimotani, H. T. Yuan, N. Kimura, T. Nojima, H. Aoki, Y. Iwasa and M. Kawasaki, Nat. Nanotechnol. 6, 408 (2011).ADSCrossRefGoogle Scholar
  8. [8]
    J. T. Ye, S. Inoue, K. Kobayashi, Y. Kasahara, H. T. Yuan, H. Shimotani and Y. Iwasa, Nat. Mater. 9, 125 (2010).ADSCrossRefGoogle Scholar
  9. [9]
    R. Scherwitzl, P. Zubko, I. G. Lezama, S. Ono, A. F. Morpurgo, G. Catalan and J-M. Triscone, Adv. Mater. 22, 5517 (2010).CrossRefGoogle Scholar
  10. [10]
    J. Jeong, N. Aetukuri, T. Graf, T. D. Schladt, M. G. Samant and S. S. P. Parkin, Science 339, 1402 (2013).ADSCrossRefGoogle Scholar
  11. [11]
    P-H. Xiang et al, Adv. Mater. 23, 5822 (2011).CrossRefGoogle Scholar
  12. [12]
    T. Hatano, Z. Sheng, M. Nakamura, M. Nakano, M. Kawasaki, Y. Iwasa and Y. Tokura, Adv. Mater. 26, 2874 (2014).CrossRefGoogle Scholar
  13. [13]
    B. Cui et al, Adv. Funct. Mater. 24, 7233 (2014).CrossRefGoogle Scholar
  14. [14]
    C. Ge et al, Adv. Mater. Interfaces 2, 1500407 (2015).CrossRefGoogle Scholar
  15. [15]
    S. Ryu and H. M. Jang, J. Korean Phys. Soc. 43, 734 (2006).Google Scholar
  16. [16]
    N. G. Bebenin, R. I. Zainullina, V. V. Mashkautsan, V. V. Ustinov and Ya. M. Mukovskii, Phys. Rev. B 69, 104434 (2004).ADSCrossRefGoogle Scholar
  17. [17]
    H. Yuan, H. Shimotani, A. Tsukazaki, A. Ohtomo, M. Kawasaki and Y. Iwasa, J. Am. Chem. Soc. 132, 6672 (2010).CrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2016

Authors and Affiliations

  1. 1.Department of PhysicsInha UniversityIncheonKorea

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