Journal of the Korean Physical Society

, Volume 69, Issue 6, pp 1085–1088 | Cite as

X-ray nanoscopy study on metal nano-structure formation at a metal-organic interface

  • Si Woo Lee
  • Jung Hyeong Cho
  • Hyo Jung Kim
  • Su Yong Lee
  • Hyun Hwi Lee
  • Nam Dong Kim
  • Hyun-Joon Shin
  • Tae-Yeol Jeon
Article
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Accepted:
  • 63 Downloads

Abstract

Scanning transmission X-ray microscopy (STXM) with ~30-nm spatial resolution revealed at annealing effect on the metal-organic interface of an Al layer with a poly (3-hexylthiophene) (P3HT) organic semiconducting layer with and without phenyl-C61-butyric acid methyl ester (PCBM). In the case of a P3HT/Al layer with a high-tensile-strain organic over-layer, the overall interface changed to a zagged morphology with Al nano pillars after thermal annealing. On the contrary, a P3HT:PCBM/Al layer with a less-tensile-strain organic over-layer showed a smooth interface except for a few nano pillars. These interfacial morphology changes were related to the initial strain status and to the relaxation process and the phase separation of P3HT crystals relating to the PCBM. Grazing-incident wide-angle X-ray scattering (GI-WAXS) measurements were also conducted to examine the residual strain and the crystalline properties of P3HT in the presence of PCBM.

Keywords

STXM Strain OPVs P3HT 
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Copyright information

© The Korean Physical Society 2016

Authors and Affiliations

  • Si Woo Lee
    • 1
  • Jung Hyeong Cho
    • 1
  • Hyo Jung Kim
    • 1
  • Su Yong Lee
    • 2
  • Hyun Hwi Lee
    • 2
  • Nam Dong Kim
    • 2
  • Hyun-Joon Shin
    • 2
  • Tae-Yeol Jeon
    • 2
  1. 1.Department of Organic Material Science and EngineeringPusan National UniversityBusanKorea
  2. 2.Pohang Accelerator LaboratoryPohang University of Science and TechnologyPohangKorea

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