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Interface properties of FeMgOCu-phthalocyanine metal-insulator-organic semiconductor structures

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Abstract

Hybrid interface structures consisting of organic copper-phthalocyanine (CuPc) and ferromagnetic metal Fe(001) with and without a MgO(001) cover were investigated by using surface sensitive techniques of X-ray photoemission spectroscopy and ultraviolet photoemission spectroscopy. A systematic study of the energy level alignment at the interfaces was carried out. For the hybrid interfaces considered here, our results indicate that the insertion of an artificially-grown ultra-thin oxide layer MgO(001) can prevent Femi level pinning and induce a rather large interface dipole, thereby resulting in remarkable CuPc Fermi level shifts when the thickness of the CuPc film is less than 3 nm. This study provides a better understanding of spin filtering in MgO-based organic spin devices and a new way to alter the interface electronic structure of metalorganic semiconductor hybrid systems.

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Authors and Affiliations

  1. Department of Physics, Ewha Womans University, Seoul, 120-750, Korea

    Nyun Jong Lee, Yu Jeong Bae & Tae Hee Kim

  2. Flucto-Order Functions Research Team, Rikagaku Kenkyūjo (RIKEN), Advanced Science Institute, Wako, Saitama, 351-0198, Japan

    Eisuke Ito & Masahiko Hara

Authors
  1. Nyun Jong Lee
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  2. Yu Jeong Bae
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  3. Tae Hee Kim
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  4. Eisuke Ito
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  5. Masahiko Hara
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Correspondence to Tae Hee Kim.

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Lee, N.J., Bae, Y.J., Kim, T.H. et al. Interface properties of FeMgOCu-phthalocyanine metal-insulator-organic semiconductor structures. Journal of the Korean Physical Society 65, 1995–2000 (2014). https://doi.org/10.3938/jkps.65.1995

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  • DOI: https://doi.org/10.3938/jkps.65.1995

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