Journal of the Korean Physical Society

, Volume 64, Issue 5, pp 715–721 | Cite as

Effect of phosphorus doping concentration on n-type Ge layer growth

  • Yeon-Ho Kil
  • Hyeon Deok Yang
  • Jong-Han Yang
  • Sukill Kang
  • Tae Soo Jeong
  • Chel-Jong Choi
  • Taek Sung Kim
  • Kyu-Hwan Shim
  • Dae-Jung Kim
Article
First Online:
Received:
Accepted:

Abstract

The n-type Ge layers with various phosphorus doping concentrations were grown on p-type Si (100) wafers by using Rapid Thermal Chemical Vapor Deposition (RTCVD). The root-mean-square (RMS) surface roughness of the n-type Ge layer increased from 0.167 to 14.131 nm when the phosphorus doping concentration was increased from 3 × 1016 to 3 × 1019 cm−3. High-Resolution X-ray Diffraction was used to evaluate the in-plane lattice constants and the tensile strain of the n-type Ge layer as functions of the phosphorus doping concentration. The presence of tensile strain was further confirmed from the Raman measurements, which revealed a strain reduction from 0.071 to 0.065% when the phosphorus doping concentration was increased from 3 × 1016 to 3 × 1019 cm−3. Moreover, a considerable increase in the photocurrent peak energy was observed.

Keywords

Ge Phosphorus Strain Photocurrent RT-CVD 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    S. Mirabella, G. Impellizzeri, A. M. Piro, E. Bruno and M. G. Grimaldi, Appl. Phys. Lett. 92, 251909 (2008).ADSCrossRefGoogle Scholar
  2. [2]
    S. M. Sze and J. C. Irvin, Solid State Electron. 11, 599 (1968).ADSCrossRefGoogle Scholar
  3. [3]
    M. K. Das and N. R. Das, Opt. Quant. Electron 41, 539 (2009).CrossRefGoogle Scholar
  4. [4]
    L. Chen, P. Dong and M. Lipson, Opt. Express 16, 11513 (2008).ADSCrossRefGoogle Scholar
  5. [5]
    J. Oh, S. Csutak and J. C. Campbell, IEEE Photon. Technol. Lett. 14, 369 (2002).ADSCrossRefGoogle Scholar
  6. [6]
    X. Sun, J. Liu, L. C. Kimerling and J. Michel, IEEE J. Sel. Top. Quantum Electron 16, 124 (2010).Google Scholar
  7. [7]
    J. Liu, X. Sun, L. C. Kimerling and J. Michel, Opt. Lett. 34, 1738 (2009).ADSCrossRefGoogle Scholar
  8. [8]
    S. Cheng, J. Lu, G. Shambat, H. Y. Yu, K. Saraswat, J. Vuckovic and Y. Nishi, Opt. Express 17, 10019 (2009).ADSCrossRefGoogle Scholar
  9. [9]
    J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling and J. Michel, Thin Solid Films 520, 3354 (2012).ADSCrossRefGoogle Scholar
  10. [10]
    X. Sun, J. Liu, L. C. Kimerling and J. Michel, Opt. Lett. 34, 1198 (2009).ADSCrossRefGoogle Scholar
  11. [11]
    S. L. Cheng, J. Lu, G. Shambat, H. Y. Yu, K. Saraswat, J. Vuckovic and Y. Nishi, Opt. Express 17, 10019 (2009).ADSCrossRefGoogle Scholar
  12. [12]
    M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes and P. Boucaud, J. Appl. Phys. 108, 023105 (2010).ADSCrossRefGoogle Scholar
  13. [13]
    M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper and J. Schulze, IEEE Photon. Technol. Lett. 23, 1751 (2011).ADSCrossRefGoogle Scholar
  14. [14]
    T. Arguirov, M. Kittler, M. Oehme, N. V. Abrosimov, E. Kasper and J. Schulze, Solid State Phenomena 178, 25 (2011).CrossRefGoogle Scholar
  15. [15]
    M. El Krudi, G. Fishman, S. Sauvage and P. Boucaud, J. Appl. Phys. 107, 013710 (2010).ADSCrossRefGoogle Scholar
  16. [16]
    J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma and R. T. Howe, Nature Photon. 6, 398 (2012).ADSGoogle Scholar
  17. [17]
    M. El Krudi, H. Bertin, E. Martincic, M. de Kersauson, G. Fishman, S. Sauvage, A. Bosseboueuf and P. Boucaud, Appl. Phys. Lett. 96, 041909 (2010).ADSCrossRefGoogle Scholar
  18. [18]
    J. R. Sanchez-Pereza, C. Boztugb, F. Chena, F. F. Sudradjatb, D. M. Paskiewicze, R. B. Jacobsona, M. G. Lagally and R. Paiella, Proc. Natl. Acad. Sci. U.S.A. 108, 18893 (2011).ADSCrossRefGoogle Scholar
  19. [19]
    T. H. Cheng, K. L. Peng, C. Y. Ko, C. Y. Chen, H. S. Lan, Y. R. Wu, C. W. Liu, and H. H. Tseng, Appl. Phys. Lett. 96, 211108 (2010).ADSCrossRefGoogle Scholar
  20. [20]
    J. F. Liu, X. Sun, D. Pan, X. X. Wang, L. C. Kimerling, T. L. Koch and J. Michel, Opt. Express 15, 11272 (2007).ADSCrossRefGoogle Scholar
  21. [21]
    X. Sun, J. Liu, L. C. Kimerling and J. Michel, Appl. Phys. Lett. 95, 011911 (2009).ADSCrossRefGoogle Scholar
  22. [22]
    T. S. Kim, Y. H. Kil, W. K. Hong, H. D. Yang, S. Kang, T. S. Jeong and K. H. Shim, ECS Transactions 50, 381 (2012).CrossRefGoogle Scholar
  23. [23]
    J. M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon and J. M. Fédéli, J. Appl. Phys. 95, 5905 (2004).ADSCrossRefGoogle Scholar
  24. [24]
    D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel and L. C. Kimerling, Áppl. Phys. Lett. 84, 906 (2004).ADSCrossRefGoogle Scholar
  25. [25]
    T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong and S. Tripathy Appl. Phys. Lett. 90, 092108 (2007).ADSCrossRefGoogle Scholar
  26. [26]
    Z. Zhou, J. He, R. Wang, C. Li and J. Yu, Optics Communications 283, 3404 (2010).ADSCrossRefGoogle Scholar
  27. [27]
    Y. Chen, C. Li, Z. Zhou, H. Lai, S. Chen, W. Ding, B. Cheng and Y. Yu, Appl. Phys. Lett. 94, 141902 (2009).ADSCrossRefGoogle Scholar
  28. [28]
    Z. W. Zhou, C. Li, H. K. Lai, S. Y. Chen and J. Z. Yu, J. Crystal Growth 310, 2508 (2008).ADSCrossRefGoogle Scholar
  29. [29]
    D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel and L. C. Kimerling, Appl. Phys. Lett. 84, 906 (2004).ADSCrossRefGoogle Scholar
  30. [30]
    P. H. Tan, K. Brunner, D. Bougeard and G. Abstreiter, Phys. Rev. B 68, 125302 (2003).ADSCrossRefGoogle Scholar
  31. [31]
    M. Ya. Valakh, R. Yu. Holiney, V. N. Dzhagan, Z. F. Krasil’nik, O. S. Lytvyn, D. N. Lobanov, A. G. Milekhin, A. I. Nikiforov, A. V. Novikov, O. P. Pchelyakov and V. A. Yukhymchuk, Phys. Sol. State. 47, 54 (2005).ADSCrossRefGoogle Scholar
  32. [32]
    Y. Y. Fang, J. Tolle, R. Roucka, A. V. G. Chizmeshya, J. Kouvetakis, R. R. D’Costa and J. Menendez, Appl. Phys. Lett. 90, 061915 (2007).ADSCrossRefGoogle Scholar
  33. [33]
    Y. Huo, H. Lin, R. Chen, M. Makarova, Y. Rong, M. Li, T. I. Kamins, J. Vuckovic and J. S. Harris, Appl. Phys. Lett. 98, 011111 (2011).ADSCrossRefGoogle Scholar
  34. [34]
    Y. Ishikawa, K. Wada, D. D. Cannon, J. Liu, H. C. Luan and L. C. Kimerling Appl. Phys. Lett. 82, 2044 (2003).ADSCrossRefGoogle Scholar
  35. [35]
    X. Sun, J. Liu, L. C. Kimerling and J. Michel, Appl. Phys. Lett. 95, 011911 (2009).ADSCrossRefGoogle Scholar
  36. [36]
    R. R. Lieten, K. Bustillo, T. Smets, E. Simoen, J. W. Ager III, E. E. Haller and J. P. Locquet, Phys. Rev. B 86, 035204 (2012).ADSCrossRefGoogle Scholar
  37. [37]
    Y. Bai, K. E. Lee, C. Cheng, M. L. Lee and E. A. Fitzgerald, J. Appl. Phys. 104, 084518 (2008).ADSCrossRefGoogle Scholar
  38. [38]
    J. Liu, D. D. Cannon, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel and L. C. Kimerling, Phys. Rev. B 70, 155309 (2004).ADSCrossRefGoogle Scholar
  39. [39]
    P. Lautenschlager, M. Garriga, S. Logothetidis and M. Cardonna, Phys. Rev. B 35 (1987) 9174.ADSCrossRefGoogle Scholar
  40. [40]
    Y. P. Varshni, Physica 34, 149 (1967).ADSCrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2014

Authors and Affiliations

  • Yeon-Ho Kil
    • 1
  • Hyeon Deok Yang
    • 1
  • Jong-Han Yang
    • 1
  • Sukill Kang
    • 1
  • Tae Soo Jeong
    • 1
  • Chel-Jong Choi
    • 1
  • Taek Sung Kim
    • 1
  • Kyu-Hwan Shim
    • 1
  • Dae-Jung Kim
    • 2
  1. 1.Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of PhysicsChonbuk National UniversityJeonjuKorea
  2. 2.Division of Liberal ArtsHanbat National UniversityDaejeonKorea

Personalised recommendations