Journal of the Korean Physical Society

, Volume 64, Issue 2, pp 173–176 | Cite as

Multi-valued resistive switching characteristics in WO x /AlO y heterojunction resistive switching memories

  • Yongcheol Jo
  • B. U. Jang
  • Jongmin Kim
  • Duhwan Kim
  • Hyeonseok Woo
  • Inho Kim
  • Wooyoung Park
  • Hyunsik Im
  • Hyungsang Kim
Letters
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Abstract

The multi-valued resistive switching (RS) characteristics and mechanism in a WO x /AlO y heterojunction-based nonvolatile memory have been investigated. Although Al/WO x /Pt and Al/AlO y /Pt show different RS characteristics, bipolar and unipolar modes, respectively, the Al/WO x /AlO y /Pt structure shows both bipolar and unipolar RS characteristics, depending on the magnitude of the applied voltage. Three resistance states, which are defined as the low-resistance state (LRS), the mid-high-resistance state (mid-HRS) and the high-resistance state (HRS), are observed. A model combining two different RS mechanisms, oxygen ions involving the redox process at the interface and filamentary conduction, is proposed, and provides a simple physical concept to understand the multi-valued RS behavior. Our findings will be useful to design and optimize oxide heterojunction-based non-volatile RS memory devices.

Keywords

Resistive switching Heterojunction Oxides Multi-value 
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Copyright information

© The Korean Physical Society 2014

Authors and Affiliations

  • Yongcheol Jo
    • 1
  • B. U. Jang
    • 1
  • Jongmin Kim
    • 1
  • Duhwan Kim
    • 1
  • Hyeonseok Woo
    • 1
  • Inho Kim
    • 1
  • Wooyoung Park
    • 1
  • Hyunsik Im
    • 1
  • Hyungsang Kim
    • 1
  1. 1.Division of Physics and Semiconductor ScienceDongguk UniversitySeoulKorea

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