Journal of the Korean Physical Society

, Volume 64, Issue 10, pp 1461–1465 | Cite as

Ferromagnetic states of p-type silicon doped with Mn

  • Z. A. Yunusov
  • Sh. U. Yuldashev
  • Kh. T. Igamberdiev
  • Y. H. Kwon
  • T. W. Kang
  • M. K. Bakhadyrkhanov
  • S. B. Isamov
  • N. F. Zikrillaev
Article
First Online:
Received:
Accepted:
  • 63 Downloads

Abstract

In this work, the ferromagnetic states of Mn-doped p-type silicon samples were investigated. Two different types of ferromagnetic states have been observed in Si (Mn, B). The samples with a relatively high concentration of Mn revealed a ferromagnetic state with a Curie temperature above room temperature, and that ferromagnetism was due to the Mn x B y ferromagnetic clusters. The samples with a moderate concentration of Mn at low temperatures revealed a ferromagnetic state that was mediated by carriers (holes). The samples demonstrated the anomalous Hall effect at temperatures below 100 K and had a negative magneto-resistivity peak at a temperature close to the Curie temperature. The thermal diffusivity measurements demonstrated the existence of a second-order phase transition in the samples with a moderate Mn concentration. The specific heat’s critical exponent α = 0.5, determined from the thermal diffusivity measurements, confirmed the long-range nature of the magnetic exchange interaction in these samples.

Keywords

Si doped by Mn Diluted magnetic semiconductor Critical behavior 

PACS numbers

75.50.Pp 75.60.Ej 75.40.Cx 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova and D. M. Treger, Science 294, 1488 (2001).ADSCrossRefGoogle Scholar
  2. [2]
    I. Zutic, J. Fabian and S. D. Sarma, Rev. Modern Phys. 76, 323 (2004).ADSCrossRefGoogle Scholar
  3. [3]
    J. K. Furdyna and J. Kossut, Semiconductors and Semimetals V. 25 (Academic Press, New York, 1988).Google Scholar
  4. [4]
    H. Ohno, Science 281, 951 (1998).ADSCrossRefGoogle Scholar
  5. [5]
    E. R. Weber, Appl. Phys. A30, 1 (1983).ADSCrossRefGoogle Scholar
  6. [6]
    M. Bolduc, A. Awo-Affouda, A. Stollenwerk, M. B. Huang, F. G. Ramos, G. Agnello and V. P. LaBella, Phys. Rev. B71, 033302 (2005).ADSCrossRefGoogle Scholar
  7. [7]
    Y. H. Kwon, T. W. Kang, H. Y. Cho and T. W. Kim, Solid State Commun. 136, 257 (2005).ADSCrossRefGoogle Scholar
  8. [8]
    S. Zhou, K. Potzger, G. Zhang, A. Mucklich, F. Eichhorn, N. Schell, R. Grotzschel, B. Schmidt, W. Skorupa, M. Helm, J. Fassbender and D. Greiger, Phys. Rev. B75, 085203 (2007).ADSCrossRefGoogle Scholar
  9. [9]
    Y. Ko, K. L. Teo, T. Liew, T. C. Chong, M. MacKenzie, I. MacLare and J. N. Chapman, J. Appl. Phys. 104, 033912 (2008).ADSCrossRefGoogle Scholar
  10. [10]
    L. Berger and G. Bergmann, The Hall Effect and Its Applications, edited by C. L. Chien and C. R. Westgate (Plenum, New York, 1980), p. 55.Google Scholar
  11. [11]
    M. Marinelli, U. Zammit, F. Mercuri and R. Pizzoferrato, J. Appl. Phys. 72, 1096 (1992).ADSCrossRefGoogle Scholar
  12. [12]
    X. Meng, K. Bao, P. Zhu, Z. He, Q. Tao, J. Li, Z. Mao and T. Cui, J. Appl. Phys. 111, 112616 (2012).ADSCrossRefGoogle Scholar
  13. [13]
    F. Matsukura, H. Ohno, A. Shen and Y. Sugawara, Phys. Rev. B57, R2037 (1998).ADSCrossRefGoogle Scholar
  14. [14]
    A. Oleaga, A. Salazar, D. Prabhakaran and A. T. Boothroyd, Phys. Rev. B 70, 184402 (2004).ADSCrossRefGoogle Scholar
  15. [15]
    S.-K. Ma Modern Theory of Critical Phenomena (Benjamin, New York, 1976), p. 82.Google Scholar

Copyright information

© The Korean Physical Society 2014

Authors and Affiliations

  • Z. A. Yunusov
    • 1
  • Sh. U. Yuldashev
    • 1
  • Kh. T. Igamberdiev
    • 1
  • Y. H. Kwon
    • 1
  • T. W. Kang
    • 1
  • M. K. Bakhadyrkhanov
    • 2
  • S. B. Isamov
    • 2
  • N. F. Zikrillaev
    • 2
  1. 1.Quantum-functional Semiconductor Research CenterDongguk UniversitySeoulKorea
  2. 2.Tashkent State Technical UniversityTashkentUzbekistan

Personalised recommendations