Journal of the Korean Physical Society

, Volume 64, Issue 10, pp 1430–1436 | Cite as

Electroluminescence of n-Ge/i-Ge/p-Si heterojunction PIN LEDs

  • Yeon-Ho Kil
  • Jong-Han Yang
  • Joung Hee Kim
  • Joo Yong Jeong
  • Sukill Kang
  • Tae Soo Jeong
  • Chel-Jong Choi
  • Taek Sung Kim
  • Kyu-Hwan Shim
Article
First Online:
Received:
Accepted:

Abstract

A PIN Light Emitting Diode (LED) was fabricated from the n-Ge/i-Ge/p-Si heterojunction structure grown by using Rapid Thermal Chemical Vapor Deposition (RTCVD). Ge buffer layers were grown at 350 °C with a thickness of ~110 nm in the first step. Then, high-temperature i-Ge layers were grown at 500 °C with a thickness of ~1.40 μm in the second step. The phosphorusdoped n-type Ge layers were grown at 500 °C with a thickness of ~0.61 µm in the third step. The surface morphology of the n-Ge/i-Ge layer was mirror like and the n-Ge/i-Ge layer was under a tensile strain of ~0.071%. Current-voltage characteristics of the PIN LED indicated a reasonable reverse saturation current of 140 μA at −1V. Electroluminescence characteristics showed a shift of the direct band gap to lower energies based on the depending of maximum peak position on the injection current. The direct band gap of the tensile-strained LEDs was found to be 0.746 eV.

Keywords

Electroluminescence Heterostructure RTCVD Ge PIN LED 

PACS numbers

78.40.Fy 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    S. Mirabella, G. Impellizzeri, A. M. Piro, E. Bruno and M. G. Grimaldi, Appl. Phys. Lett. 92, 251909 (2008).ADSCrossRefGoogle Scholar
  2. [2]
    S. M. Sze and J. C. Irvin, Solid State Electron. 11, 599 (1968).ADSCrossRefGoogle Scholar
  3. [3]
    M. K. Das and N. R. Das, Opt. Quant. Electron. 41, 539 (2009).CrossRefGoogle Scholar
  4. [4]
    L. Chen, P. Dong and M. Lipson Opt. Express 16, 11513 (2008).ADSCrossRefGoogle Scholar
  5. [5]
    J. Oh, S. Csutak and J. C. Campbell, IEEE Photon. Technol. Lett. 14, 369 (2002).ADSCrossRefGoogle Scholar
  6. [6]
    X. Sun, J. Liu, L. C. Kimerling and J. Michel, IEEE J. Sel. Top. Quantum Electron. 16, 124 (2010).CrossRefGoogle Scholar
  7. [7]
    J. Liu, X. Sun, L. C. Kimerling and J. Michel, Opt. Lett. 34, 1738 (2009).ADSCrossRefGoogle Scholar
  8. [8]
    S. L. Cheng, J. Lu, G. Shambat, H. Y. Yu, K. Saraswat, J. Vuckovic and Y. Nishi, Opt. Express 17, 10019 (2009).ADSCrossRefGoogle Scholar
  9. [9]
    J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling and J. Michel, Thin Solid Films 520, 3354 (2012).ADSCrossRefGoogle Scholar
  10. [10]
    X. Sun, J. Liu, L. C. Kimerling and J. Michel, Opt. Lett. 34, 1198 (2009).ADSCrossRefGoogle Scholar
  11. [11]
    S. L. Cheng, J. Lu, G. Shambat, H. Y. Yu, K. Saraswat, J. Vuckovic and Y. Nishi, Opt. Express 17, 10019 (2009).ADSCrossRefGoogle Scholar
  12. [12]
    M. de Kersauson, R. Jakomin, M. El Kurdi, G. Beaudoin, N. Zerounian, F. Aniel, S. Sauvage, I. Sagnes and P. Boucaud, J. Appl. Phys. 108, 023105 (2010).ADSCrossRefGoogle Scholar
  13. [13]
    M. Oehme, J. Werner, M. Gollhofer, M. Schmid, M. Kaschel, E. Kasper and J. Schulze, IEEE Photon. Technol. Lett. 23, 1751 (2011).ADSCrossRefGoogle Scholar
  14. [14]
    T. Arguirov, M. Kittler, M. Oehme, N. V. Abrosimov, E. Kasper and J. Schulze, Solid State Phenomena 178, 25 (2011).CrossRefGoogle Scholar
  15. [15]
    M. El Krudi, G. Fishman, S. Sauvage and P. Boucaud, J. Appl. Phys. 107, 013710 (2010).ADSCrossRefGoogle Scholar
  16. [16]
    J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma and R. T. Howe, Nature Photon. 6, 398 (2012).ADSCrossRefGoogle Scholar
  17. [17]
    M. E. Krudi, H. Bertin, E. Martincic, M. de Kersauson, G. Fishman, S. Sauvage, A. Bosseboueuf and P. Boucaud, Appl. Phys. Lett. 96, 041909 (2010).ADSCrossRefGoogle Scholar
  18. [18]
    J. R. Sanchez-Pereza, C. Boztugb, F. Chena, F. F. Sudradjatb, D. M. Paskiewicze, R. B. Jacobsona, M. G. Lagally and R. Paiella, Proc. Natl. Acad. Sci. U.S.A. 108, 18893 (2011).ADSCrossRefGoogle Scholar
  19. [19]
    T. H. Cheng, K. L. Peng, C. Y. Ko, C. Y. Chen, H. S. Lan, Y. R. Wu, C. W. Liu and H. H. Tseng, Appl. Phys. Lett. 96, 211108 (2010).ADSCrossRefGoogle Scholar
  20. [20]
    J. F. Liu, X. Sun, D. Pan, X. X. Wang, L. C. Kimerling, T. L. Koch and J. Michel, Opt. Express 15, 11272 (2007).ADSCrossRefGoogle Scholar
  21. [21]
    T. Arguirov, M. Kittler, M. Oehme, N. V. Abrosimov, E. Kasper and J. Schulze, Solid State Phenomena 178, 25 (2011).CrossRefGoogle Scholar
  22. [22]
    Xiaochen Sun, Jifeng Liu, Lionel C. Kimerling and Jurgen Michel, Appl. Phys. Lett. 95, 011911 (2009).ADSCrossRefGoogle Scholar
  23. [23]
    T. S. Kim, Y. H. Kil, W. K. Hong, H. D. Yang, S. Kang, T. S. Jeong and K. H. Shim, ECS Transactions 50, 381 (2012).CrossRefGoogle Scholar
  24. [24]
    J. M. Hartmann, A. Abbadie, A. M. Papon, P. Holliger, G. Rolland, T. Billon and J. M. Fèdèli, J. Appl. Phys. 95, 5905 (2004).ADSCrossRefGoogle Scholar
  25. [25]
    D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel and L. C. Kimerling, Appl. Phys. Lett. 84, 906 (2004).ADSCrossRefGoogle Scholar
  26. [26]
    T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong and S. Tripathy Appl. Phys. Lett. 90 092108 (2007).ADSCrossRefGoogle Scholar
  27. [27]
    Z Zhou, J He, R Wang, C Li and J Yu, Optics Commun 283 3404 (2010).ADSCrossRefGoogle Scholar
  28. [28]
    Y Chen, C Li, Z Zhou, H Lai, S Chen, W Ding, B Cheng and Y Yu, Appl. Phys. Lett. 94 141902 (2009).ADSCrossRefGoogle Scholar
  29. [29]
    Z. W. Zhou, C. Li, H. K. Lai, S. Y. Chen and J. Z. Yu, J. Crystal Growth 310 2508 (2008).ADSCrossRefGoogle Scholar
  30. [30]
    D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel and L. C. Kimerling, Appl. Phys. Lett. 84, 906 (2004).ADSCrossRefGoogle Scholar
  31. [31]
    J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri and H. von Känel, Appl. Phys. Lett. 94 201106 (2009).ADSCrossRefGoogle Scholar
  32. [32]
    A. E. Rakhshani, J. Appl. Phys. 108, 094502 (2010).ADSCrossRefGoogle Scholar
  33. [33]
    L. Colace, G. Assanto, D. Fulgoni and L. Nash, Journal of Lightwave Tech. 26, 2954 (2008).ADSCrossRefGoogle Scholar
  34. [34]
    J. H. He and C. H. Ho, Appl. Phys. Lett. 91, 233105 (2007).ADSCrossRefGoogle Scholar
  35. [35]
    C. Sah, R. N. Noyce and W. Shockley, Proc. IRE 45, 1228 (1957).CrossRefGoogle Scholar
  36. [36]
    C. X. Wang, G. W. Yang, H. W. Liu, Y. H. Han, J. F. Luo, C. X. Gao and G. T. Zou, Appl. Phys. Lett. 84, 2427 (2004).ADSCrossRefGoogle Scholar
  37. [37]
    J. M. Shah, Y. L. Li, T. Gessmann, and E. F. Schubert, J. Appl. Phys. 94 2627 (2003).ADSCrossRefGoogle Scholar
  38. [38]
    C. X. Wang, G. W. Yang, T. C. Zhang, H. W. Liu, Y. H. Han, J. F. Luo, C. X. Gao, and G. T. Zou, Diamond Relat. Mater. 12 1548 (2003).ADSCrossRefGoogle Scholar
  39. [39]
    A. P. Zhang, G. T. Dang, F. Ren, H. Cho, K. P. Lee, S. J. Pearton, J. I. Chyi, T. E. Nee, C. M. Lee and C. C. Chuo, IEEE Trans.on Electron Dev. 48, 407 (2001).ADSCrossRefGoogle Scholar
  40. [40]
    G. Masini, L. Colace, G. Assanto, H. Chiao Luan and L. C. Kimerling, IEEE Trans. on Electron Dev. 48, 1092 (2001).ADSCrossRefGoogle Scholar
  41. [41]
    E. F. Schubert Light-emitting diodes 2nd ed. (Cambridge University Press 2006).CrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2014

Authors and Affiliations

  • Yeon-Ho Kil
    • 1
  • Jong-Han Yang
    • 1
  • Joung Hee Kim
    • 1
  • Joo Yong Jeong
    • 1
  • Sukill Kang
    • 1
  • Tae Soo Jeong
    • 1
  • Chel-Jong Choi
    • 1
  • Taek Sung Kim
    • 1
  • Kyu-Hwan Shim
    • 1
  1. 1.Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of PhysicsChonbuk National UniversityJeonjuKorea

Personalised recommendations