Effect of Ta substitution on the dielectric and the piezoelectric properties of lead-free (Na0.53K0.47)0.96Li0.04(Nb1−x Ta x )O3 ceramics
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Abstract
Ta-substituted (Na0.53K0.47)0.96Li0.04(Nb1−x Ta x )O3 ceramics (NKLNT, x = 0.0, 0.013, 0.015, 0.017, 0.019, 0.021) were prepared through the solid-state reaction method. The crystallized NKLNT single phases were confirmed by using X-ray diffraction. Ta-substitution affected the dielectric behaviors and the piezoelectric properties. The enhanced piezoelectric coefficient d 33 and planar electromechanical coupling coefficient k p were estimated to be 232 pC/N and 0.46, respectively. The effects of Ta substitution on the temperature dependences of the dielectric and the piezoelectric properties were investigated at temperatures around the orthorhombic-tetragonal phase-transition temperature (T O-T ).
Keywords
Ferroelectrics Dielectric Na0.5K0.5NbO3(NKN) ABO3 perovskite P-E hysteresis loop Piezoelectric Lead freePreview
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References
- [1]T. Takenaka, H. Nagata and Y. Hirum, Jpn. J. Appl. Phys. 47, 3787 (2008).ADSCrossRefGoogle Scholar
- [2]J. S. Kim, H. J. Lee, S. Y. Lee, I. W. Kim and S. D. Lee, Thin Solid Films 518, 63903 (2010).Google Scholar
- [3]L. Liu, H. Fan, L. Fang, X. Chen, H. Dammak and M. P. Thi, Mater. Chem. Phys. 117, 138 (2009).CrossRefGoogle Scholar
- [4]L. Gao, Y. Huang, Y. Hu and H. Du, Ceram. Int. 33, 1041 (2007).CrossRefGoogle Scholar
- [5]Y. Guo, K. Kakimoto and H. Ohsato, Appl. Phys. Lett. 85, 4121 (2004).ADSCrossRefGoogle Scholar
- [6]H. J. Lee, I. W. Kim, J. S. Kim, C. W. Ahn and B. H. Park, Appl. Phys. Lett. 94, 092902 (2009).ADSCrossRefGoogle Scholar
- [7]J. S. Kim, C. W. Ahn, S. Y. Lee, A. Ullah and I. W. Kim, Curr. Appl. Phys. 11, S149 (2011).ADSCrossRefGoogle Scholar
- [8]L. Zhengfa, L. Yongxiang and Z. Jiwei, Curr. Appl. Phys. 11, S2 (2011).CrossRefGoogle Scholar
- [9]S. T. Chung, S-B. Cho and J. S. Kim, J. Korean Phys. Soc. 61, 691 (2012).Google Scholar
- [10]J. S. Kim, C. W. Ahn, I. W. Kim, S-B. Cho, C. H. Chung and H. S. Lee, Ferroelectrics 404, 180 (2010).CrossRefGoogle Scholar
- [11]J. S. Kim, S. Y. Lee, C. W. Ahn, H. I. Hwang, H. J. Lee, S. H. Bae and I. W. Kim, Jpn. J. Appl. Phys. 49, 095805 (2010).ADSCrossRefGoogle Scholar
- [12]E. Hollenstein, D. Damjanovic and N. Setter, J. Euro. Cera. Soc. 27, 4093 (2007).CrossRefGoogle Scholar
- [13]Y. S. Sung, S. Baik, J. H. Lee, G. H. Ryu, D. Do, T. K. Song, M. H. Kim and W. J. Kim, Appl. Phys. Lett. 101, 012902 (2012).ADSCrossRefGoogle Scholar
- [14]K. S. Lee and J. H. Yoo, Curr. Appl. Phys. 12, 798 (2012).ADSCrossRefMathSciNetGoogle Scholar
- [15]J. L. Zhang. X. J. Zong, L. Wu, Y. Gao and S. F. Shao, Appl. Phys. Lett. 95, 022909 (2009).CrossRefGoogle Scholar
- [16]I.-H. Chan, C.-T. Sun, M.-P. Houng and S.-Y. Chu, Ceram. Int. 37, 2061 (2011).CrossRefGoogle Scholar
- [17]M.-R. Yang, C.-S. Hong, C.-C. Tsai and S.-Y. Chu, J. Alloys Compd. 488, 169 (2009).CrossRefGoogle Scholar