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Journal of the Korean Physical Society

, Volume 62, Issue 10, pp 1363–1367 | Cite as

Manipulation of domain wall dynamics in microwires by transverse magnetic field

  • J. M. Blanco
  • A. Chizhik
  • M. Ipatov
  • V. Zhukova
  • J. Gonzalez
  • A. Talaat
  • V. Rodionova
  • A. Zhukov
Article

Abstract

In this paper we studied effect of transversal magnetic field, magnetoelastic anisotropy and defects on DW dynamics of amorphous microwires. We observed that the viscous single DW region is limited by the samples defects, which determine the threshold between single and multiple domain wall propagation regimes.

Manipulating the magnetoelastic energy through application of tensile stress of studied microwires we significantly affect the DW dynamics in magnetically bistable microwires.

Under effect of transversal magnetic field, H b , we observed change of DW dynamics and we were able to create additional DW on the opposite wire end. Changing the H b we were able to tailor propagation field of this additional DW and observe DW collision in different parts of microwire.

Keywords

Glass-coated microwires Domain wall propagation Magnetoelastic anisotropy 

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References

  1. [1]
    D. A. Allwood, G. Xiong, C. C. Faulkner, D. Atkinson, D. Petit and R. P. Cowburn, Science 309, 1688 (2005).ADSCrossRefGoogle Scholar
  2. [2]
    M. Hayashi, L. Thomas, Ch. Rettner, R. Moriya, X. Jiang and S. Parkin, Phys.Rev. Lett. 97, 207205 (2006).ADSCrossRefGoogle Scholar
  3. [3]
    N. L. Schryer and L. R. Walker, J. Appl. Phys. 45, 5406 (1974).ADSCrossRefGoogle Scholar
  4. [4]
    T. Ono, H. Miyajima, K. Shigeto, K. Mibu, N. Hosoito and T. Shinjo, Science 284, 468 (1999).ADSCrossRefGoogle Scholar
  5. [5]
    A. Zhukov, Appl. Phys. Let. 78, 3106 (2001).ADSCrossRefGoogle Scholar
  6. [6]
    M. Neagu, H. Chiriac, E. Hristoforou, I. Darie and F. Vinai, J. Magn. Magn. Mater. 226–230, 1516 (2001).CrossRefGoogle Scholar
  7. [7]
    R. Varga, A. Zhukov, V. Zhukova, J. M. Blanco and J. Gonzalez, Phys. Rev. B 76, 132406 (2007).ADSCrossRefGoogle Scholar
  8. [8]
    R. Varga, A. Zhukov, J. M. Blanco et al., Phys. Rev. B 74, 212405 (2006).ADSCrossRefGoogle Scholar
  9. [9]
    C. C. Faulkner, D. A. Allwood and R. P. Cowburn, J. Appl. Phys. 103, 073914 (2008).ADSCrossRefGoogle Scholar
  10. [10]
    S.-H. Huang and C.-H. Lai, Appl. Phys. Lett. 95, 032505 (2009).ADSCrossRefGoogle Scholar
  11. [11]
    A. P. Zhukov, Materials and Design 14, 299 (1993).CrossRefGoogle Scholar
  12. [12]
    M. V ázquez, J. M. Garc ía-Beneytez, J. M. Garc ía, J. P. Sinnecker and A. Zhukov, J. Appl. Phys. 88, 6501 (2000).ADSCrossRefGoogle Scholar
  13. [13]
    V. Zhukova, M. Ipatov and A Zhukov, Sensors 9, 9216 (2009).CrossRefGoogle Scholar
  14. [14]
    V. Zhukova, J. M. Blanco, M. Ipatov and A. Zhukov, J. Appl. Phys. 106, 113914 (2009).ADSCrossRefGoogle Scholar
  15. [15]
    V. Zhukova, J. M. Blanco, M. Ipatov and A. Zhukov, IEEE Trans. Magn. 47, 3783 (2011).ADSCrossRefGoogle Scholar
  16. [16]
    H. Chiriac, T.-A- Ovari and A. Zhukov, J. Magn. Magn. Mater. 254–255, 469 (2003).CrossRefGoogle Scholar
  17. [17]
    Yu. Kabanov, A. Zhukov, V. Zhukova and J. Gonzalez, Appl. Phys. Lett. 87, 142507 (2005).ADSCrossRefGoogle Scholar
  18. [18]
    L. V. Panina, M. Ipatov, V. Zhukova and A. Zhukov, Physica B doi:10.1016/j.physb.2011.06.047 (2012).Google Scholar
  19. [19]
    S. A. Gudoshnikov, Yu. B. Grebenshchikov, B. Ya. Ljubimov, P. S. Palvanov, N. A. Usov, M. Ipatov, A. Zhukov A and J. Gonzalez, Phys. Status Solidi A 206, 613 (2009).ADSCrossRefGoogle Scholar
  20. [20]
    P. A. Ekstrom and A. Zhukov, J. Phys. D: Appl. Phys. 43, 205001 (2010).ADSCrossRefGoogle Scholar
  21. [21]
    M. Ipatov, N. A. Usov, A. Zhukov and J. González, Physica B 403, 379 (2008).ADSCrossRefGoogle Scholar
  22. [22]
    M. Ipatov, V. Zhukova, A. K. Zvezdin and A. Zhukov, J. Appl. Phys. 106, 103902-1–5 (2009).ADSCrossRefGoogle Scholar
  23. [23]
    J. Velázquez, M. Vazquez and A. Zhukov, J. Mater. Res. 11, 2499 (1996).ADSCrossRefGoogle Scholar
  24. [24]
    K. J. Sixtus and L. Tonks, Phys. Rev. 42, 419 (1932).ADSCrossRefGoogle Scholar
  25. [25]
    A. Zhukov, Adv. Func. Mat. 16, 675 (2006).MathSciNetCrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2013

Authors and Affiliations

  • J. M. Blanco
    • 1
  • A. Chizhik
    • 2
  • M. Ipatov
    • 2
  • V. Zhukova
    • 2
  • J. Gonzalez
    • 2
  • A. Talaat
    • 2
  • V. Rodionova
    • 2
    • 3
    • 4
  • A. Zhukov
    • 5
    • 6
  1. 1.Dpto. de Física AplicadaEUPDS, UPV/EHUSan SebastianSpain
  2. 2.Dpto. Fisica de Materiales, Fac. QuimicasUPV/EHUSan SebastianSpain
  3. 3.Faculty of PhysicsMoscow State UniversityLeninskie Gory, MoscowRussia
  4. 4.Immanuel Kant Baltic Federal UniversityKaliningradRussia
  5. 5.Dpto. de Física de Materiales, Fac. QuímicasUPV/EHUSan SebastiánSpain
  6. 6.Basque Foundation for ScienceIKERBASQUEBilbaoSpain

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