Journal of the Korean Physical Society

, Volume 61, Issue 1, pp 108–112 | Cite as

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

  • Sejoon Lee
  • Sung Min Kim
  • Emil B. Song
  • Kang L. Wang
  • David H. Seo
  • Sunae Seo
Research Papers

Abstract

Graphene-based non-volatile charge-trap memory devices were fabricated and characterized to investigate the implementation effect of both 2-dimensional graphene and the 3-dimensional memory structure. The single-layer-graphene (SLG) channel devices exhibit larger memory windows compared to the multi-layer-graphene (MLG) channel devices. This originates from the gate-coupling strength being larger in SLG devices than in MLG devices. Namely, the electrostatic charge screening effect becomes enhanced upon increasing the number of graphene layers; therefore, the gate tunability is reduced in MLG compared to SLG. The results suggest that SLG is more desirable for memory applications than MLG.

Keywords

Graphene Nonvolatile memory Charge-trap memory Field-effect transistor 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. [1]
    Y. J. Seong, E. H. Nam, J. H. Yoon, H. Kim, J.-Y. Choi, S. Lee, Y. H. Bae, J. Lee, Y. Cho and S. L. Min, IEEE Trans. Comput. 59, 905 (2010).CrossRefGoogle Scholar
  2. [2]
    H. Teruyoshi, Y. Ryoji, T. Mitsue, S. Shigeki and K. Takeuchi, Jpn. J. Appl. Phys. 49, 04DD08 (2010).CrossRefGoogle Scholar
  3. [3]
    A. J. Hong, E. B. Song, H. S. Yu, M. J. Allen, J. Kim, J. D. Fowler, J. K. Wassei, Y. Park, Y. Wang, J. Zou, R. B. Kaner, B. H. Weiller and K. L. Wang, ACS Nano 5, 7812 (2011).CrossRefGoogle Scholar
  4. [4]
    E. B. Song, B. Lian, S. M. Kim, S. Lee, T.-K. Chung, M. Wang, C. Zeng, G. Xu, K. Wong, Y. Zhou, H. I. Rasool, D. H. Seo, H.-J. Chung, J. Heo, S. Seo and K. L. Wang, Appl. Phys. Lett. 99, 042109 (2011).ADSCrossRefGoogle Scholar
  5. [5]
    Y. Zheng, G.-X. Ni, C.-T. Toh, C.-Y. Tan, K. Yao and B. Özyilmaz, Phys. Rev. Lett. 105, 166602 (2010).ADSCrossRefGoogle Scholar
  6. [6]
    S. Lee, E. B. Song, S. Kim, D. H. Seo, S. Seo, T. W. Kang and K. L. Wang, Appl. Phys. Lett. 100, 023109 (2012).ADSCrossRefGoogle Scholar
  7. [7]
    S. Bae et al., Nat. Nanotechnol. 5, 574 (2010).ADSCrossRefGoogle Scholar
  8. [8]
    A. Reina, X. Jia, J. Ho, D. Nezich, H. Son, V. Bulovic, M. S. Dresselhaus and J. Kong, Nano Lett. 9, 30 (2008).ADSCrossRefGoogle Scholar
  9. [9]
    I. Jeon, H. Yang, S.-H. Lee, J. Heo, D. H. Seo, J. Shin, U. I. Chung, Z. G. Kim, H.-J. Chung and S. Seo, ACS Nano 5, 1915 (2011).CrossRefGoogle Scholar
  10. [10]
    E. B. Song, B. Lian, G. Xu, B. Yuan, C. Zeng, A. Chen, M. Wang, S. Kim, M. Lang, Y. Zhou and K. L. Wang, Appl. Phys. Lett. 96, 081911 (2010).ADSCrossRefGoogle Scholar
  11. [11]
    A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth and A. K. Geim, Phys. Rev. Lett. 97, 187401 (2006).ADSCrossRefGoogle Scholar
  12. [12]
    D. Graf, F. Molitor, K. Ensslin, C. Stampfer, A. Jungen, C. Hierold and L. Wirtz, Nano Lett. 7, 238 (2007).ADSCrossRefGoogle Scholar
  13. [13]
    S. Kim, J. Nah, I. Jo, D. Shahrjerdi, L. Colombo, Z. Yao, E. Tutuc and S. K. Banerjee, Appl. Phys. Lett. 94, 062107 (2009).ADSCrossRefGoogle Scholar
  14. [14]
    K. F. Mak, M. Y. Sfeir, J. A. Misewich and T. F. Heinz, Proc. Natl. Acad. Sci. U.S.A. 107, 14999 (2010).ADSCrossRefGoogle Scholar
  15. [15]
    O. Wunnicke, Appl. Phys. Lett. 89, 083102 (2006).ADSCrossRefGoogle Scholar
  16. [16]
    D. R. Khanal and J. Wu, Nano Lett. 7, 2778 (2007).ADSCrossRefGoogle Scholar
  17. [17]
    D. F. S. Oda, Silicon Nanoelectronics (Taylor & Francis, New York, 2006).Google Scholar
  18. [18]
    D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2006).Google Scholar
  19. [19]
    S. M. Sze, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2006).CrossRefGoogle Scholar

Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  • Sejoon Lee
    • 1
  • Sung Min Kim
    • 2
  • Emil B. Song
    • 2
  • Kang L. Wang
    • 2
  • David H. Seo
    • 3
  • Sunae Seo
    • 4
  1. 1.Quantum-functional Semiconductor Research CenterDongguk University-SeoulSeoulKorea
  2. 2.Department of Electrical EngineeringUniversity of CaliforniaLos AngelesUSA
  3. 3.Samsung Electronics Co. Ltd.YonginKorea
  4. 4.Department of PhysicsSejong UniversitySeoulKorea

Personalised recommendations