Fabrication and electrical characteristics of graphene-based charge-trap memory devices
- First Online:
- Cite this article as:
- Lee, S., Kim, S.M., Song, E.B. et al. Journal of the Korean Physical Society (2012) 61: 108. doi:10.3938/jkps.61.108
- 182 Downloads
Graphene-based non-volatile charge-trap memory devices were fabricated and characterized to investigate the implementation effect of both 2-dimensional graphene and the 3-dimensional memory structure. The single-layer-graphene (SLG) channel devices exhibit larger memory windows compared to the multi-layer-graphene (MLG) channel devices. This originates from the gate-coupling strength being larger in SLG devices than in MLG devices. Namely, the electrostatic charge screening effect becomes enhanced upon increasing the number of graphene layers; therefore, the gate tunability is reduced in MLG compared to SLG. The results suggest that SLG is more desirable for memory applications than MLG.