Journal of the Korean Physical Society

, Volume 61, Issue 1, pp 108–112

Fabrication and electrical characteristics of graphene-based charge-trap memory devices

  • Sejoon Lee
  • Sung Min Kim
  • Emil B. Song
  • Kang L. Wang
  • David H. Seo
  • Sunae Seo
Research Papers

DOI: 10.3938/jkps.61.108

Cite this article as:
Lee, S., Kim, S.M., Song, E.B. et al. Journal of the Korean Physical Society (2012) 61: 108. doi:10.3938/jkps.61.108
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Abstract

Graphene-based non-volatile charge-trap memory devices were fabricated and characterized to investigate the implementation effect of both 2-dimensional graphene and the 3-dimensional memory structure. The single-layer-graphene (SLG) channel devices exhibit larger memory windows compared to the multi-layer-graphene (MLG) channel devices. This originates from the gate-coupling strength being larger in SLG devices than in MLG devices. Namely, the electrostatic charge screening effect becomes enhanced upon increasing the number of graphene layers; therefore, the gate tunability is reduced in MLG compared to SLG. The results suggest that SLG is more desirable for memory applications than MLG.

Keywords

Graphene Nonvolatile memory Charge-trap memory Field-effect transistor 

Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  • Sejoon Lee
    • 1
  • Sung Min Kim
    • 2
  • Emil B. Song
    • 2
  • Kang L. Wang
    • 2
  • David H. Seo
    • 3
  • Sunae Seo
    • 4
  1. 1.Quantum-functional Semiconductor Research CenterDongguk University-SeoulSeoulKorea
  2. 2.Department of Electrical EngineeringUniversity of CaliforniaLos AngelesUSA
  3. 3.Samsung Electronics Co. Ltd.YonginKorea
  4. 4.Department of PhysicsSejong UniversitySeoulKorea

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