Journal of the Korean Physical Society

, Volume 60, Issue 5, pp 842–848 | Cite as

A RESURF LDMOSFET with a dummy gate on partial SOI

  • Behzad Ebrahimi
  • Behrouz Afzal
  • Ali Afzali-Kusha
  • Saeed Mohammadi
Article

Abstract

In this paper, we propose a laterally double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) that uses a dummy gate on top of the lightly-doped drain (LDD) region in a reduced surface field (RESURF) structure. The structure is based on the partial silicon-on-insulator (PSOI) structure to increase the operating frequency of the device. The use of the dummy gate induces another electric field peak in the structure, which increases the breakdown voltage of the transistor. It also improves the gate-drain feedback capacitance, the transconductance, and the ON-resistance of the device. For a LDD length of 3 µm, the breakdown voltage increases about 10%, the transconductance increases over 200%, and the ON-resistance decreases about 45%. When a LDD length of 10 µm is used, the increase in the breakdown voltage is 17%. In addition, we propose a breakdown voltage model for the structure, which may be used to optimize the design of the structure.

Keywords

Breakdown voltage Dummy gate LDMOSFET RESURF PSOI 

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References

  1. [1]
    E. McShane and K. Shenai, IEEE Trans Electron Devices 49, 643 (2002).ADSCrossRefGoogle Scholar
  2. [2]
    S. K. Chung, IEEE Trans Electron Devices 47, 1006 (2000).ADSCrossRefGoogle Scholar
  3. [3]
    A.W. Ludikhuize, in Proceeding of the 12th International Symposium on Power Semiconductor Devices and ICs (Toulouse, France, May 22–25, 2000), p. 11.Google Scholar
  4. [4]
    S. H. Kim, I. Y. Park, Y. I. Choi and S. K. Chung, J. Korean Phys. Soc. 39, S39 (2001).Google Scholar
  5. [5]
    M. N. Marbell, S. V. Cherepko, J. C. M. Hwang, M. A. Shibib and W. R. Curtice, IEEE Trans. Electron Devices 8, 193 (2008).Google Scholar
  6. [6]
    A. A. Orouji, S. Sharbati and M. Fathipour, IEEE Trans. Electron Devices 9, 449 (2009).Google Scholar
  7. [7]
    S. E. J. Mahabadi, A. A. Orouji, P. Keshavarzi and H. Moghadam, Semicond. Sci. Technol. 26, 95005 (2011).CrossRefGoogle Scholar
  8. [8]
    M. Saremi, B. Ebrahimi, A. Afzali-Kusha and S. Mohammadi, Microelectron. Reliab. 51, 2069 (2011).CrossRefGoogle Scholar
  9. [9]
    M. N. Marbell, S. V. Cherepko, J. C. M. Hwang, M. A. Shibib and W. R. Curtice, IEEE Trans. Electron Devices 54, 580 (2007).ADSCrossRefGoogle Scholar
  10. [10]
    F. Udrea, A. Popescu and W. Milne, in Proceeding of IEEE Int. SOI Conference (CA, USA, October 6–9, 1997), p. 102.Google Scholar
  11. [11]
    H. Elahipanah and A. A. Orouji, IEEE Trans. Electron Devices 57, 1959 (2010).ADSCrossRefGoogle Scholar
  12. [12]
    J. G. Fiorenza and J. A. del Alamo, IEEE Trans. Electron Devices 49, 687 (2002).ADSCrossRefGoogle Scholar
  13. [13]
    J. Park, T. Grasser, H. Kosina and S. Selberherr, Solid-State Electron. 47, 275 (2003).ADSCrossRefGoogle Scholar
  14. [14]
    S. K. Chung and S. Y. Han, IEEE Trans. Electron Devices 45, 1374 (1998).ADSCrossRefGoogle Scholar
  15. [15]
    Sentaurus Device, Two-dimensional Device Simulation Program (Synopsys, Mountain View, CA, 2005).Google Scholar
  16. [16]
    J. He and X. Zhang, Microelectron. J. 32, 655 (2001).CrossRefGoogle Scholar
  17. [17]
    X. Luo, Y. Wang, H. Deng, J. Fan, T. Lei and Y. Liu, IEEE Trans. Electron Devices 57, 535 (2010).ADSCrossRefGoogle Scholar
  18. [18]
    R. J. O. M. Hoofman, G. J. A. M. Verheijden and J. Michelon, Microelectron. Eng. 80, 337 (2005).CrossRefGoogle Scholar
  19. [19]
    S. Xu, F. Baiocchi, H. Safar, J. Lott, A. Shibib, Z. Xie, T. Nigam, B. Jones, B. Thompson, J. Desko and P. Gammel, in Proceeding the 15th International Symposium on Power Semiconductor Devices and ICs (Cambridge, UK, April 14–17, 2003), p. 190.Google Scholar

Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  • Behzad Ebrahimi
    • 1
  • Behrouz Afzal
    • 1
  • Ali Afzali-Kusha
    • 1
  • Saeed Mohammadi
    • 2
  1. 1.School of Electrical and Computer EngineeringUniversity of TehranTehranIran
  2. 2.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA

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