Journal of the Korean Physical Society

, Volume 60, Issue 5, pp 842–848 | Cite as

A RESURF LDMOSFET with a dummy gate on partial SOI

  • Behzad Ebrahimi
  • Behrouz Afzal
  • Ali Afzali-Kusha
  • Saeed Mohammadi


In this paper, we propose a laterally double-diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) that uses a dummy gate on top of the lightly-doped drain (LDD) region in a reduced surface field (RESURF) structure. The structure is based on the partial silicon-on-insulator (PSOI) structure to increase the operating frequency of the device. The use of the dummy gate induces another electric field peak in the structure, which increases the breakdown voltage of the transistor. It also improves the gate-drain feedback capacitance, the transconductance, and the ON-resistance of the device. For a LDD length of 3 µm, the breakdown voltage increases about 10%, the transconductance increases over 200%, and the ON-resistance decreases about 45%. When a LDD length of 10 µm is used, the increase in the breakdown voltage is 17%. In addition, we propose a breakdown voltage model for the structure, which may be used to optimize the design of the structure.


Breakdown voltage Dummy gate LDMOSFET RESURF PSOI 


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Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  • Behzad Ebrahimi
    • 1
  • Behrouz Afzal
    • 1
  • Ali Afzali-Kusha
    • 1
  • Saeed Mohammadi
    • 2
  1. 1.School of Electrical and Computer EngineeringUniversity of TehranTehranIran
  2. 2.School of Electrical and Computer EngineeringPurdue UniversityWest LafayetteUSA

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