Journal of the Korean Physical Society

, Volume 60, Issue 10, pp 1680–1684 | Cite as

Effect of the metal work function on the electrical properties of carbon nanotube network transistors

  • Un Jeong Kim
  • Dae Young Ko
  • Joon Pyo Kil
  • Jung Wha Lee
  • Wanjun Park
Article
First Online:
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Accepted:
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Abstract

A nearly perfect semiconducting single-walled carbon nanotube random network thin film transistor array was fabricated, and its reproducible transport properties were investigated. The effects of the metal work function for both the source and the drain on the electrical properties of the transistors were systematically investigated. Three different metal electrodes, Al, Ti, and Pd, were employed. As the metal work function increased, p-type behavior became dominant, and the fieldeffect hole mobility dramatically increased. Also, the Schottky barrier of the Ti-nanotube contact was invariant to the molecular adsorption of species in air.

Keywords

Carbon nanotube Carbon nanotube Network Charge transfer 
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Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  • Un Jeong Kim
    • 1
  • Dae Young Ko
    • 2
  • Joon Pyo Kil
    • 2
  • Jung Wha Lee
    • 2
  • Wanjun Park
    • 2
  1. 1.Frontier Research LabSamsung Advanced Institute of TechnologyYonginKorea
  2. 2.Department of Electronic EngineeringHanyang UniversitySeoulKorea

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