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Journal of the Korean Physical Society

, Volume 60, Issue 8, pp 1278–1281 | Cite as

Enhancement of the Raman scattering intensity in folded bilayer graphene

  • Duhee Yoon
  • Hyeonsik Cheong
  • Jin Sik Choi
  • Bae Ho Park
Article

Abstract

We found Raman scattering enhancement of the Raman G band in folded bilayer graphene. Its Raman intensity is more than 40 times greater than that of AB stacked Bernal bilayer graphene. The enhancement is interpreted as being caused by resonant Raman scattering via the π 2 * and the π 1 * states in the modified electronic band structure of the folded bilayer graphene. This enhancement of the Raman G band is a critical indicator of the strength of the coupling between the upper and the lower graphene sheets.

Keywords

Graphene Raman scattering Folded bilayer graphene 

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Copyright information

© The Korean Physical Society 2012

Authors and Affiliations

  • Duhee Yoon
    • 1
  • Hyeonsik Cheong
    • 1
  • Jin Sik Choi
    • 2
  • Bae Ho Park
    • 2
  1. 1.Department of PhysicsSogang UniversitySeoulKorea
  2. 2.Division of Quantum Phases and Devices, Department of PhysicsKonkuk UniversitySeoulKorea

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