Abstract
The problem of in situ temperature control during the growth of epitaxial layers of HgCdTe by molecular beam epitaxy is considered. Various approaches to solving the problem using spectroscopic ellipsometry are proposed. They are based on the temperature dependence of the optical constants spectra of the CdTe buffer layer and the growing HgCdTe layer. The results of experimental testing of these methods are presented, which show that the temperature measurement accuracy is several degrees, and the sensitivity reaches fractions of a degree. At the stage of stationary growth, it is possible to determine the change not only in the temperature, but also in the composition of the growing layer from the ellipsometric spectra.
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Translated by E. Oborin
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Shvets, V.A., Marin, D.V., Azarov, I.A. et al. Ellipsometric In Situ Methods of Temperature Control in the Technology of Growing MBE MCT Layers. Optoelectron.Instrument.Proc. 57, 476–484 (2021). https://doi.org/10.3103/S8756699021050150
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DOI: https://doi.org/10.3103/S8756699021050150