Abstract
The design and fabrication of a single photon detector based on InP/InGaAs/InP single-photon avalanche diodes (SPADs) operating in Geiger mode at a telecommunication wavelength of 1550 nm are discussed. The SPAD design, the method for obtaining InP/InGaAs/InP heterostructures by molecular beam epitaxy, fabrication of SPAD chips using planar technology, and specific features of selective zinc doping of \(p\)-regions in the InP layer of the developed electronic circuits for measuring main SPAD parameters are described. Preliminary results of measurements of the parameters of the fabricated SPADs are presented.
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Funding
This work was supported by the Ministry of Science and Higher Education of the Russian Federation, project no. 075-15-2020-797 (13.1902.21.0024).
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Translated by O. Pismenov
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Preobrazhenskii, V.V., Chistokhin, I.B., Putyato, M.A. et al. Single Photon Detectors Based on InP/InGaAs/InP Avalanche Photodiodes. Optoelectron.Instrument.Proc. 57, 485–493 (2021). https://doi.org/10.3103/S8756699021050125
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DOI: https://doi.org/10.3103/S8756699021050125