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Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method

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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

The processes of second harmonic generation in the CdTe and Hg\({}_{1-x}\)Cd\({}_{x}\)Te layers and GaAs substrate of the Hg\({}_{1-x}\)Cd\({}_{x}\)Te /CdTe/ZnTe/GaAs heterostructure of orientation (013) have been analyzed. The azimuthal dependence of second harmonic signals have been measured in comparison with the calculated data obtained via the numerical simulation of an ideal crystal of specified orientation near cut (013). It has been shown that the substrate and epitaxial layers after growing have an orientation plane reversal of +8 and -3 angular degrees from ideal plane (013) for the GaAs substrates and up to 8 angular degrees from the substrate orientation for the MCT layers with a weak dependence on the composition along the thickness. The observed orientation plane reversals depend on the mismatch between the lattice parameters of conjugated materials in the Hg\({}_{1-x}\)Cd\({}_{x}\)Te/CdTe/ZnTe/GaAs heterostructure. A detected increase of noise at the minima of the azimuthal dependence of a second harmonic signal in the Hg\({}_{1-x}\)Cd\({}_{x}\)Te layers is caused by the presence of disoriented microareas.

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Funding

This study was financially supported in part by the Russian Foundation for Basic Research (project no. 18-29-20053) and the Ministry of Science and Higher Education of the Russian Federation (state registration no. AAAA-A20-120102190007-5).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090, Novosibirsk, Russia

    S. A. Dvoretskii & N. N. Mikhailov

  2. Tomsk State University, 634050, Tomsk, Russia

    S. A. Dvoretskii

  3. Technological Design Institute of Scientific Instrument Engineering, Siberian Branch, Russian Academy of Sciences, 630058, Novosibirsk, Russia

    M. F. Stupak, S. N. Makarov, A. G. Elesin & A. G. Verkhoglyad

  4. Novosibirsk State University, 630090, Novosibirsk, Russia

    N. N. Mikhailov

Authors
  1. S. A. Dvoretskii
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  2. M. F. Stupak
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  3. N. N. Mikhailov
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  4. S. N. Makarov
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  5. A. G. Elesin
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  6. A. G. Verkhoglyad
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Correspondence to S. A. Dvoretskii or M. F. Stupak.

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Dvoretskii, S.A., Stupak, M.F., Mikhailov, N.N. et al. Characterization of Crystal Perfection in the Layers of (013)HgCdTe/CdTe/ZnTe/GaAs Heterostructures via the Second Harmonic Generation Method. Optoelectron.Instrument.Proc. 57, 458–467 (2021). https://doi.org/10.3103/S8756699021050058

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