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Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux

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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

The surface transformation mechanisms upon annealing of epi-ready InP(001) substrates in the molecules arsenic flux were studied in situ by reflection high-speed electron diffraction (RHEED). The effect of the annealing temperature and arsenic flux rate on the removal of oxides from the InP surface as a result of thermal decomposition and chemical interaction of oxides with arsenic was studied.

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Funding

This study was performed within the state task to the Rzhanov Institute of Semiconductor Physics (Siberian Branch, Russian Academy of Sciences).

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    D. V. Dmitriev, D. A. Kolosovsky, A. I. Toporov & K. S. Zhuravlev

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  1. D. V. Dmitriev
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  2. D. A. Kolosovsky
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  3. A. I. Toporov
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  4. K. S. Zhuravlev
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Correspondence to D. V. Dmitriev.

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Dmitriev, D.V., Kolosovsky, D.A., Toporov, A.I. et al. Mechanisms of the Oxides Removal from the InP Surface under Annealing in an Arsenic Flux. Optoelectron.Instrument.Proc. 57, 451–457 (2021). https://doi.org/10.3103/S8756699021050046

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