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Optimization of the response of nanowire biosensors

  • Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

Nanowire field-effect transistors are highly sensitive sensor elements used for qualitative and quantitative analyses of biological and chemical substances. Optimization of the operation of the sensor is one of the key ways of increasing their sensitivity. An algorithm for choosing the operation mode of sensors based on silicon-on-insulator transistors is proposed which provides their maximum response during conductivity monitoring in the detection of target particles.

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References

  1. I. G. Neizvestny, “Semiconductor Nanowire Sensors,” Mikroelectronika 38 (4), 243–259 (2009).

    Google Scholar 

  2. E. Stern, J. F. Klemic, D. A. Routenberg, et al., “Label-Free Immunodetection with CMOS-Compatible Semiconducting Nanowires,” Nature 445 (7127), 519–522 (2007).

    Article  ADS  Google Scholar 

  3. N. Lu, A. Gao, P. Dai, et al., “CMOS-Compatible Silicon Nanowire Field-Effect Transistors for Ultrasensitive and Label-Free MicroRNAs Sensing,” Small. 10 (10), 2022–2028 (2014).

    Article  Google Scholar 

  4. A. Gao, N. Lu, Y. Wang, et al., “Enhanced Sensing of Nucleic Acids with Silicon Nanowire Field Effect Transistor Biosensors,” Nano Lett. 12 (10), 5262–5268 (2012).

    Article  ADS  Google Scholar 

  5. O. V. Naumova, B. I. Fomin, D. A. Nasimov, et al., “SOI Nanowires as Sensors for Charge Detection,” Semicond. Sci. Technol. 25 (5), 055004 (2010).

    Article  ADS  Google Scholar 

  6. P. Xuan, A. Gao, G. Zheng, and C. M. Lieber, “Subthreshold Regime has the Optimal Sensitivity for Nanowire FET Biosensors,” Nano Lett. 10 (2), 547–552 (2010).

    Article  ADS  Google Scholar 

  7. F. Yang and G.-J. Zhang, “Silicon Nanowire-Transistor Biosensor for Study of Molecule-Molecule Interactions,” Rev. Anal. Chem. 33 (2), 95–110 (2014).

    Article  Google Scholar 

  8. H.-K. Lim and J. G. Fossum, “Threshold Voltage of Thin-Film Silicon-on-Insulator (SOI) MOSFET’s,” IEEE Trans. Electron Devices. 30 (10), 1244–1251 (1983).

    Article  ADS  Google Scholar 

  9. H. J. Hovel, “Si Film Electrical Characterization in SOI Substrates by the HgFET Technique,” Solid-State Electron 47 (8), 1311–1333 (2003).

    Article  ADS  Google Scholar 

  10. S. M. Sze, Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981).

    Google Scholar 

Download references

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Correspondence to O. V. Naumova.

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Original Russian Text © O.V. Naumova, B.I. Fomin, 2016, published in Avtometriya, 2016, Vol. 52, No. 5, pp. 21–26.

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Naumova, O.V., Fomin, B.I. Optimization of the response of nanowire biosensors. Optoelectron.Instrument.Proc. 52, 434–437 (2016). https://doi.org/10.3103/S8756699016050034

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  • DOI: https://doi.org/10.3103/S8756699016050034

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