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Active mode-locking in semiconductor lasers

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Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

This paper presents the results of experimental studies of active mode-locking in an external-cavity semiconductor laser. Two methods of obtaining active mode-locking regimes have been studied: by modulation from an external generator with a frequency close to the intermode frequency of the external laser cavity and by laser current modulation at the frequency of intermode beats of the external laser cavity through an amplification feedback loop. In the first case, a stability of intermode beats of 10-14 is experimentally achieved, and in the second case, it is shown that semiconductor laser current modulation by an amplified intermode beat signal from the output of a photodetector provides a stable mode-locking regime also with mode frequency tuning, i.e., a mode-locking regime involving intermode frequency tuning with optical cavity tuning. The effects that accompany mode locking, in particular, the pulling effect and the stability of the mode-locking regime, and possibility of obtaining highly stable intermode beats by suppressing the amplitude noise component in the modulating signal have been studied. A phenomenological study of the pulling and phase locking of the intermode frequency is attempted.

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Authors and Affiliations

  1. Institute of Laser Physics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13/3, Novosibirsk, 630090, Russia

    V. F. Zakhar’yash, A. V. Kashirskii & V. M. Klement’ev

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  1. V. F. Zakhar’yash
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  2. A. V. Kashirskii
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  3. V. M. Klement’ev
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Correspondence to V. F. Zakhar’yash.

Additional information

Original Russian Text © V.F. Zakhar’yash, A.V. Kashirskii, V.M. Klement’ev, 2015, published in Avtometriya, 2015, Vol. 51, No. 6, pp. 23–31.

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Zakhar’yash, V.F., Kashirskii, A.V. & Klement’ev, V.M. Active mode-locking in semiconductor lasers. Optoelectron.Instrument.Proc. 51, 553–559 (2015). https://doi.org/10.3103/S8756699015060047

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  • DOI: https://doi.org/10.3103/S8756699015060047

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