Abstract
This paper presents the physical and technical principles of readout integrated circuit (ROIC) for reading and preprocessing focal plane array signals in the infrared spectral range 8–14 μm. The noise equivalent temperature difference of long-wavelength infrared focal plane arrays based on ROIC with frame integration of signals of multilayer quantum well structures is evaluated. The influence of technological limitations in silicon readout circuits for photo signals on the performance of IR focal plane arrays is analyze for a wide range of parameters of QWIP -based focal plane arrays and CMOS technology design rules.
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References
A. Rogal’skii, Infrared Detectors (Nauka, Novosibirsk, 2003) [in Russian]
Products of the Sofradir company: Cooled IR Photodetectors, Official Site of the Sofradir Group of Companies. http://www.sofradir-ec.com/products-cooled.asp.
E. Mottin, P. Pantigny, and R. Boch, “An Improved Architecture of IR FPA Readout Circuits,” Proc. SPIE. 3061, 119–128 (1997).
A. I. Kozlov, I. V. Marchishin, V. N. Ovsyuk, and V. V. Shashkin, “Readout integrated circuits for Multielement IR Photodetectors,” Avtometriya 41 (3), 88–99 (2005).
A. I. Kozlov, I. V. Marchishin, and V. N. Ovsyuk, “320 × 256 Silicon Multiplexers for IR Focal Plane Arrays Based on MCT Diodes,” Avtometriya 43 (4), 74–82 (2007) [Optoelectron., Instrum. Data Process. 43 (4), 351–357 (2007)].
A. I. Kozlov, “Analysis of the Design Rules of Silicon Multiplexer Circuits for Multielement Infrared Focal Plane Arrays,” Avtometriya 46 (1), 118–129 (2010) [Optoelectron., Instrum. Data Process. 46 (1), 96–105 (2010)].
A. I. Kozlov, “Design Features and Some Readout integrated circuit for Infrared Photodetectors,” Opticheskii Zh. 77 (7), 19–29 (2010).
A. I. Kozlov and I. V. Marchishin, “Manufacturing-Oriented Developments of Silicon Multiplexers for Multielement IR Photodetectors,” Avtometriya 48 (4), 60–72 (2012) [Optoelectron., Instrum. Data Process. 48 (4), 373–383 (2012)].
http://www.xfab.com/en/technology/cmos.
http://www.angstrem.ru/proizvodstvo/foundry; http://www.angstrem.ru/proizvodstvo/krislal.
http://mikron.sitronics.ru/products/micron/technology.
R. E. DeWames, J. M. Arias, L. J. Kozlowski, and G. M. Williams, “An Assessment of HgCdTe and GaAs/GaAlAs Technologies for LWIR Infrared Imagers,” Proc. SPIE 1735, 2–16 (1992).
L. J. Kozlowski, R. B. Bailey, S. C. Cabelli, et al., 640 × 480 PACE HgCdTe FPA,” Proc. SPIE 1735, 163–174 (1992).
V. N. Ovsyuk, Yu. G. Sidorov, V. V. Vasiliev, and V. V. Shashkin, 128 × 128 Photodetector Arrays Based on HgCdTe Layers and Multilayer Heterostructures with GaAs/AlGaAs Quantum Wells,” Prikl. Fiz., No. 5, 70–79 (2000).
D. G. Esaev, I. V. Marchishin, V. N. Ovsyuk, et al. “Infrared Focal Plane Array Based on GaAs/AlGaAs Quantum-Well Multilayer Structures,” Avtometriya 43 (4), 112–118 (2007) [Optoelectron., Instrum. Data Process. 43, (4), 382–387 (2007)].
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Original Russian Text © M.A. Dem’yanenko, D.G. Esaev, A.I. Kozlov, I.V. Marchishin, V.N. Ovsyuk, 2015, published in Avtometriya, 2015, Vol. 51, No. 2, pp. 110–118.
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Dem’yanenko, M.A., Esaev, D.G., Kozlov, A.I. et al. Technological limitations in readout integrated circuits for infrared focal plane arrays based on quantum-well infrared photodetectors. Optoelectron.Instrument.Proc. 51, 198–204 (2015). https://doi.org/10.3103/S8756699015020144
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DOI: https://doi.org/10.3103/S8756699015020144