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New microelectromechanical cavities for gigahertz frequencies

  • Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
  • Published:
Optoelectronics, Instrumentation and Data Processing Aims and scope

Abstract

A possibility of creating micrometer-sized microelectromechanical cavities operating at gigahertz frequencies is considered. A thin film of a dielectric (ferroelectric) with a high dielectric permeability and electric strength is included into the cavity structure. Specific features of device operation and its structure are described by a mathematical model that allows one to find exact relations between the parameters characterizing natural oscillations of the moving element and the triggering voltage.

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Authors and Affiliations

  1. Institute of Automation and Electrometry, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 1, Novosibirsk, 630090, Russia

    E. G. Kostsov

  2. Sobolev Institute of Mathematics, Siberian Branch, Russian Academy of Sciences, pr. Akademika Koptyuga 4, Novosibirsk, 630090, Russia

    S. I. Fadeev

Authors
  1. E. G. Kostsov
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  2. S. I. Fadeev
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Corresponding author

Correspondence to E. G. Kostsov.

Additional information

Original Russian Text © E.G. Kostsov, S.I. Fadeev, 2013, published in Avtometriya, 2013, Vol. 49, No. 2, pp. 115–122.

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Kostsov, E.G., Fadeev, S.I. New microelectromechanical cavities for gigahertz frequencies. Optoelectron.Instrument.Proc. 49, 204–210 (2013). https://doi.org/10.3103/S8756699013020143

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  • DOI: https://doi.org/10.3103/S8756699013020143

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