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Extension of the Spectral Lasing Range of Semiconductor Lasers in the Dispersive Resonator

  • SEMICONDUCTOR LASERS
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Abstract

It is experimentally found that at the tuning of the laser diode lasing wavelength in a spectrally selective external resonator to the shortwave region of the spectrum a range of wavelengths is manifested for which lasing depends on the previous state of the system, namely, at the shortwave boundary of the lasing spectrum there is a region of 913 to 918 nm in which lasing occurs only under continuous operation conditions and only at the preliminary shift of the lasing spectrum from the lower-energy spectrum region. This effect is supposed to be due to the distortion of the gain spectrum of the active medium when lasing occurs in it.

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ACKNOWLEDGMENTS

The authors are grateful to I.P. Erema for helpful discussions of the work.

Funding

The work was supported by the Russian Foundation for Basic Research, project no. 18-29-20086. This work was also supported by the Ministry of Science and Higher Education within the State assignment FSRC “Crystallography and Photonics” Russian Academy of Sciences.

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Correspondence to Ya. V. Kravchenko.

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The authors declare that they have no conflicts of interest.

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Translated by M. Potapov

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Bairamov, M.N., Derzhavin, S.I., Kravchenko, Y.V. et al. Extension of the Spectral Lasing Range of Semiconductor Lasers in the Dispersive Resonator. Phys. Wave Phen. 29, 307–311 (2021). https://doi.org/10.3103/S1541308X21040014

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  • DOI: https://doi.org/10.3103/S1541308X21040014

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