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Nonlinear induced reflection of light waves in semiconductors

  • Nonlinear Light Scattering
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Abstract

A scheme of nonlinear optical four-wave mixing of two counterpropagating laser beams on the surface of a semiconductor is proposed and analyzed. It is shown that the density modulation of the electron-hole plasma current carriers in the light-induced grating manifests itself in the probe beam depolarization signal after the reflection from the surface, which is sensitive to the state of the surface and presence of complex molecules on it.

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References

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Authors and Affiliations

  1. Wave Research Center, Prokhorov General Physics Institute, Russian Academy of Sciences, ul. Vavilova 38, Moscow, 119991, Russia

    A. F. Bunkin, V. G. Mikhalevich, S. M. Pershin & V. N. Streltsov

Authors
  1. A. F. Bunkin
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  2. V. G. Mikhalevich
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  3. S. M. Pershin
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  4. V. N. Streltsov
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Correspondence to A. F. Bunkin.

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Bunkin, A.F., Mikhalevich, V.G., Pershin, S.M. et al. Nonlinear induced reflection of light waves in semiconductors. Phys. Wave Phen. 24, 279–281 (2016). https://doi.org/10.3103/S1541308X16040051

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  • DOI: https://doi.org/10.3103/S1541308X16040051

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