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Hole Formation in Semiconductor Materials by Laser Microprocessing

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Abstract—

The process of laser formation of microholes in semiconductor substrates using an EM-4452-1 laser-processing unit with a pulse repetition frequency of a picosecond laser from 10 to 300 kHz at a radiation energy up to 10 μJ is investigated. The combination of high-speed movements of the laser beam by the galvanoscanner system and precise positioning of the processed material increases the efficiency of laser microprocessing and expands the functional capabilities of the equipment.

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Authors and Affiliations

  1. Belarusian State University of Informatics and Radioelectronics, 220013, Minsk, Belarus

    V. L. Lanin

  2. OAO Planar-SO, 220033, Minsk, Belarus

    I. B. Petuhov & G. E. Retsiukhin

Authors
  1. V. L. Lanin
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  2. I. B. Petuhov
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  3. G. E. Retsiukhin
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Corresponding authors

Correspondence to V. L. Lanin or I. B. Petuhov.

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The authors declare that they have no conflicts of interest.

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Translated by O. Pismenov

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Lanin, V.L., Petuhov, I.B. & Retsiukhin, G.E. Hole Formation in Semiconductor Materials by Laser Microprocessing. Surf. Engin. Appl.Electrochem. 59, 523–528 (2023). https://doi.org/10.3103/S1068375523040075

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  • DOI: https://doi.org/10.3103/S1068375523040075

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