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Tensoresistance as an information source on mobility anisotropy parameter K = μ⊥/μ‖ in multivalley semiconductors and certain new possibilities of deformation metrology

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Abstract

Mobility anisotropy of majority carriers in multivalley lightly doped n-Ge and n-Si single crystals is investigated by the tensoresistance method at T = 77.4 K, and values of the mobility anisotropy parameter are found under mentioned conditions: K = μ⊥/μ‖ = 15.6 in n-Ge and K = 5.89 in n-Si.

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Authors and Affiliations

  1. Institute for Nuclear Research, National Academy of Sciences of Ukraine, pr. Nauky 47, Kyiv, 03680, Ukraine

    G. P. Gaidar

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Original Russian Text © G.P. Gaidar, 2015, published in Elektronnaya Obrabotka Materialov, 2015, No. 2, pp. 85–92.

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Gaidar, G.P. Tensoresistance as an information source on mobility anisotropy parameter K = μ⊥/μ‖ in multivalley semiconductors and certain new possibilities of deformation metrology. Surf. Engin. Appl.Electrochem. 51, 188–195 (2015). https://doi.org/10.3103/S1068375515020039

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  • DOI: https://doi.org/10.3103/S1068375515020039

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