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Changes in the electric resistance of silicon under cyclic nanoindentation

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Abstract

The dependence of the electric resistance of the n +ITO-SiO2- nSi structure on the external mechanical stress generated by cyclic indentation was studied. Two factors contributing to this phenomenon, along with the contribution of each of them to the change in the conductivity of the samples during the indentation, were discussed. It was found that one of these factors, i.e., the phase transformations under the indenter in the Si, is responsible for only one-third of the total change in the conductivity of the silicon. The major part of the change in the conductivity of the silicon is most probably caused by the effect of the change in the piezoresistance of the silicon in the process of the loading/unloading of the sample during the nanoindentation (the other factor).

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  1. Institute of Applied Physics, Academy of Sciences of Moldova, ul. Akademiei 5, Chisinau, MD-2028, Republic of Moldova

    E. E. Harea

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  1. E. E. Harea
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Original Russian Text © E.E. Harea, 2011, published in Elektronnaya Obrabotka Materialov, 2011, No. 3, pp. 106–109.

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Harea, E.E. Changes in the electric resistance of silicon under cyclic nanoindentation. Surf. Engin. Appl.Electrochem. 47, 290–293 (2011). https://doi.org/10.3103/S1068375511030185

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