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Anisotropy of electric conductivity in irradiated TlInS2 crystals

  • Electrical Processes in Engineering and Chemistry
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Abstract

The anisotropy of electric conductivity in hexagonal TlInS2 crystals irradiated with γ-quanta are studied. It is found that, upon light exposure (∼50 krad), radiation defects accumulate in the interlayer space and in the layer plane. As a result, the electric conductivity σ⊥ and σ‖ decreases. As the exposure dose increases (above 200 krad), due to the interaction between the radiation defects and the initial inhomogeneities, complex defects appear with the result that the electric conductivity in either direction increases exponentially.

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Authors and Affiliations

  1. Institute of Radiation Problems, National Academy of Sciences of Azerbaijan, ul. Agaeva 9, Baku, AZ-1143, Republic of Azerbaijan

    R. S. Madatov, A. I. Nadzhafov, V. S. Mamedov & M. A. Mamedov

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  1. R. S. Madatov
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  2. A. I. Nadzhafov
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  3. V. S. Mamedov
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  4. M. A. Mamedov
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Correspondence to R. S. Madatov.

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Original Russian Text © R.S. Madatov, A.I. Nadzhafov, V.S. Mamedov, M.A. Mamedov, 2010, published in Elektronnaya Obrabotka Materialov, 2010, No. 2, pp. 77–79.

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Madatov, R.S., Nadzhafov, A.I., Mamedov, V.S. et al. Anisotropy of electric conductivity in irradiated TlInS2 crystals. Surf. Engin. Appl.Electrochem. 46, 154–156 (2010). https://doi.org/10.3103/S1068375510020122

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  • DOI: https://doi.org/10.3103/S1068375510020122

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