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Pinning structure of dimensional phonon resonance in quantum wires

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Abstract

The dimensional phonon resonances in dimensionally-quantum semiconductor wires are considered. It is supposed that the absorption of light is caused by electron transitions between dimensionally-quantum subbands in potential wells with the participation of long-wavelength phonons. The influence of resonance electron-phonon interaction on a spectrum of one-dimensional electrons in quantum wires is investigated. It is shown that the spectrum contains two branches and also the splitting of the peak of the dimensional phonon resonance into two components; the distance between them is determined by the resonance electron-phonon interaction.

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Authors and Affiliations

  1. Samarkand Branch, Tashkent University of Information Technologies, ul. Shorukh mirzo 47A, Samarkand, 140104, Republic of Uzbekistan

    B. Eshpulatov

  2. Navoi State University, Samarkand, Universitetskii bul’var 15, Samarkand, 140104, Republic of Uzbekistan

    E. U. Arzikulov

Authors
  1. B. Eshpulatov
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  2. E. U. Arzikulov
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Correspondence to B. Eshpulatov.

Additional information

Original Russian Text © B.Eshpulatov, E.U. Arzikulov, 2008, published in Elektronnaya Obrabotka Materialov, 2008, No. 2, pp. 105–109.

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Eshpulatov, B., Arzikulov, E.U. Pinning structure of dimensional phonon resonance in quantum wires. Surf. Engin. Appl.Electrochem. 44, 165–168 (2008). https://doi.org/10.3103/S1068375508020154

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  • DOI: https://doi.org/10.3103/S1068375508020154

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