Abstract
The results of studies and working out and creation of a thermosensor on the basis of highly compensated silicon doped with Mn and S are presented in this work. It is stated that the thermosensitivity and the stability of the parameters of the worked out thermosensor are higher than those of the existing sensitive thermosensor. It is stated that the thermosensor on the basis of highly compensated silicon doped with manganese Si〈B,Mn〉 more effectively functions in the region of temperaturesT= 100–400 K, and the thermosensor on the basis of Si〈B,S〉 can be successfully used in the region of more high temperaturesT= 200–450°C.
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Bakhadyrkhanov, M.K., Zikrillaev, N.F., and Ayupov, K.S., JTF, 2006, vol. 76, no 9, pp. 128–129.
Bakhadyrkhanov, M.K., Ayupov, K.S., and Sattarov, A., JTF, 2005, vol 39, no 7, pp. 823–825.
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Original Russian Text © M.K. Bakhadyrkhanov, S.A. Valiev, S.S. Nasriddinov, S.A. Tachilin, 2007, published in Elektronnaya Obrabotka Materialov, 2007, No. 6, pp. 111–113.
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Bakhadyrkhanov, M.K., Valiev, S.A., Nasriddinov, S.S. et al. Sensitive thermosensors on the basis of highly compensated silicon. Surf. Engin. Appl.Electrochem. 43, 505–507 (2007). https://doi.org/10.3103/S106837550706018X
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DOI: https://doi.org/10.3103/S106837550706018X