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Implementation of Additional Functions of Facilities for Pulse Current Tests of Power Semiconductors

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Abstract

A theoretical justification of the design solutions for several additional functions of an apparatus for testing power semiconductors is proposed. These functions are the electromagnetic compatibility check of the apparatus’s parts, the passage of impact current through the device, and the provision of test safety. The occurrence pattern of conducted interferences in the test system and the minimization of the periodic voltage component by packet modulation are evaluated. Potential negative effects of the test control of power semiconductors are noted. The test safety evaluation is carried out considering several important factors, such as the pulselike essence of impact current and voltage and their short duration. Packet modulation is recommended for limiting the number of sine-wave voltage periods.

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REFERENCES

  1. Yershov, A.B., Khorolsky, V.Ya., Efanov, A.V., and Shemyakin, V.N., On the dependence between the amplitude and time parameters of pulse voltages in general-purpose power-supply systems, Russ. Electr. Eng., 2017, vol. 88, no. 8.

  2. Khorolsky, V.Ya., Taranov, M.A., Yershov, A.B., and Sapronov, S.V., Pomekhozashchishchennost’ elektronnykh ustroistv pri vozdeistvii impul’snykh napryazhenii sistem elektrosnabzheniya (Interference Protection of Electronic Devices Affected by Impulse Voltages of Power Supply Systems), Rostov-on-Don: Terra Print, 2008.

  3. Pravila ustroistva elektroustanovok (Design Rules of Electrical Devices), Novosibirsk: Prospekt, 2019.

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Authors and Affiliations

  1. Stavropol State Agrarian University, 355017, Stavropol, Russia

    S. V. Anikuev, E. I. Kostyukova, G. V. Nikitenko & I. K. Sharipov

Authors
  1. S. V. Anikuev
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  2. E. I. Kostyukova
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  3. G. V. Nikitenko
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  4. I. K. Sharipov
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Corresponding author

Correspondence to S. V. Anikuev.

Additional information

Translated by S. Kuznetsov

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Anikuev, S.V., Kostyukova, E.I., Nikitenko, G.V. et al. Implementation of Additional Functions of Facilities for Pulse Current Tests of Power Semiconductors. Russ. Electr. Engin. 92, 389–392 (2021). https://doi.org/10.3103/S1068371221070026

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  • DOI: https://doi.org/10.3103/S1068371221070026

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