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Selection of the heating method of semiconductor devices during their testing in a high-conductivity state

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Abstract

Possible heating methods of power semiconductor devices during their testing in a high-conductivity state are discussed. It is shown that the diffusion capacitance of the p–n junction has a significant effect on measurements of device parameters. The effect of the diffusion capacitance on the results of testing of power semiconductor devices at various shapes of heating-current pulses was investigated. Conclusions on the possibility of using current pulses of various shapes for testing power semiconductor devices in the highconductivity state are drawn.

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References

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Authors and Affiliations

  1. Ogarev Mordovia State University, Saransk, Republic of Mordovia, 430005, Russia

    S. S. Kapitonov, N. N. Bespalov, M. V. Il’in & I. V. Gulyaev

Authors
  1. S. S. Kapitonov
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  2. N. N. Bespalov
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  3. M. V. Il’in
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  4. I. V. Gulyaev
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Corresponding author

Correspondence to S. S. Kapitonov.

Additional information

Original Russian Text © S.S. Kapitonov, N.N. Bespalov, M.V. Il’in, I.V. Gulyaev, 2017, published in Elektrotekhnika, 2017, No. 6, pp. 31–34.

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Kapitonov, S.S., Bespalov, N.N., Il’in, M.V. et al. Selection of the heating method of semiconductor devices during their testing in a high-conductivity state. Russ. Electr. Engin. 88, 351–354 (2017). https://doi.org/10.3103/S1068371217060074

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  • DOI: https://doi.org/10.3103/S1068371217060074

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