Russian Electrical Engineering

, Volume 88, Issue 2, pp 77–80 | Cite as

A comparison of time-average power losses in insulated-gate bipolar transistors and hybrid SIT–MOS–transistors

  • A. S. KyuregyanEmail author
  • A. V. Gorbatyuk
  • B. V. Ivanov


Switching of equivalent silicon insulated-gate bipolar transistors, such as carrier-stored trenchgate bipolar transistors (CSTBTs) and hybrid static induction transistor/metal–oxide–semiconductor (SIT–MOS) thyristors (HSMTs), from a blocking state to a conducting state and vice versa is numerically simulated in two dimensions. It is shown that on–off switching losses in an HSMT are greater than in a fully equivalent CSTBT. Thus, time-average power P that dissipates in an HSMT becomes smaller than the power in the equivalent CSTBTh only at a long current pulse duration. However, a decrease in lifetime τ0 of nonequilibrium charge carriers in an SIT makes it possible to significantly reduce HSMT switching losses while maintaining its advantage in the on state. Consequently, for each set of CSTBT parameters, such τ0, it can be selected in the almost equivalent HSMT that power P dissipating in the HSMT will be smaller than the power in the equivalent CSTBT in any given range of amplitude J a and duration T on of the current pulses.


insulated-gate bipolar transistors static induction thyristors static and switching characteristics average power loss comparative analysis 


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Copyright information

© Allerton Press, Inc. 2017

Authors and Affiliations

  • A. S. Kyuregyan
    • 1
    Email author
  • A. V. Gorbatyuk
    • 2
  • B. V. Ivanov
    • 3
  1. 1.All-Russian Electrotechnical InstituteSt. PetersburgRussia
  2. 2.Ioffe Physical Technical InstituteRussian Academy of SciencesSt. PetersburgRussia
  3. 3.St. Petersburg Electrotechnical University LETISt. PetersburgRussia

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