Abstract
The results of investigating third-generation matrix silicon solar cells with an efficiency of more than 25% during conversion of concentrated solar radiation are given. Electrical and optical characteristics are discussed. Modern technologies of semiconductor electronics and nanotechnology will soon allow increasing the efficiency of matrix silicon solar cells to 40%.
Similar content being viewed by others
References
Green, M., Perl Cell, Univ. New South Wales, www.nsinnovations.com.au
Strebkov, D.S., Matrichnye solnechnye elementy (Matrix Solar Cells), Moscow: VIESKh, 2009, p. 125.
Strebkov, D.S., Matrichnye solnechnye elementy (Matrix Solar Cells), Moscow: VIESKh, 2009, p. 226.
Sater, D.L., et al., The Multiple Junction Edge Illuminated Solar cells, Conf. Res. Tenth IEEE Photovoltaic Specialists Conf., 1973, pp. 188–193.
Sater, D.K., US Patent no. 4516314, 1985.
Strebkov, D.S., Shepovalova, O.V., and Zadde, V.V., RF Patent no. 2336596, Byull. Izobret., 2008, no. 29.
Strebkov, D.S., Matrichnye solnechnye elementy (Matrix Solar Cells), Moscow: GNU VIESKh, 2010.
Strebkov, D.S. and Polyakov, V.I., Photovoltaic Silicon Modules with 24% Efficiency for Solar Power Plants with Concentrators, Tr. Mezhd. nauch.-prakt. konf. “Perspectivnye napravleniya al’ternativnoi energetiki i energosberegayushchie tekhnologii” (Proc. Int. Sci. Practical Conf. “Prospective Directions in Alternative Energy and Energy-Saving Technologies”), Shymkent: Auezov South Kazakhstan State Univ., 2010, vol. 1, pp. 137–145.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © D.S. Strebkov, V.I. Polyakov, 2011, published in Doklady Rossiiskoi Akademii Sel’skokhozyaistvennykh Nauk, 2011, No. 4, pp. 56–60.
This work was supported by the Russian Foundation for Basic Research, grant no. 10-08-07044-d.
About this article
Cite this article
Strebkov, D.S., Polyakov, V.I. High-efficiency third-generation silicon solar cells. Russ. Agricult. Sci. 37, 345–349 (2011). https://doi.org/10.3103/S1068367411040203
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068367411040203