Abstract
The electrical characteristics and photoresponse of the “carbon nanofilm on silicon” heterostructure obtained by laser-pulsed deposition have been investigated. The thickness of the carbon nanofilm is selected from the condition of the maximum antireflection effect of the substrate. It was found that the obtained junction is rectifying with a rectifying coefficient of 35 at 1 V. The direct current-voltage characteristic from 0.1 V to 0.35 V is in satisfactory agreement with the expression J = J0exp(eU/ηkT). An increase in voltage in the forward direction leads to the appearance of currents limited by the space charge (J = AU2). Linearization of the C–2–U dependence indicates the sharpness of the impurity distribution in the space charge region. The mechanism of the photoresponse of the heterostructure is similar to the photoresponse of anisotype heterostructures with the ‘window’ effect. The long-wavelength edge (1.1 μm) of the photosensitivity is determined by the silicon substrate, and absorption in the carbon nanofilm leads to an additional expansion of the photosensitivity region. The heterostructure has uniform photosensitivity at the level 0.8 in the wavelength range of 0.55–1.1 µm. The short-wavelength tail reaches up to 0.4 µm.
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Translated by V.M. Aroutiounian
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Dabagyan, G.A., Matevosyan, L.A. & Avjyan, K.E. Electrical Characteristics and Photo Response of the Heterostructure “Carbon Nanofilm on Silicon”. J. Contemp. Phys. 56, 247–253 (2021). https://doi.org/10.3103/S1068337221030099
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DOI: https://doi.org/10.3103/S1068337221030099