The pseudobinary HgTe–CdTe, ZnTe–CdTe and HgTe–ZnTe systems were studied and Gibbs energy of mixing were determined at 400–1000 K temperature range. Miscibility gap analysis for CdZnHgTe quaternary material system is also performed by the Gibbs free energy calculations. Quantitative explorations show that there is no immiscibility gap for CdTe–HgTe material system in the mentioned above temperature range. In spite of that system, for the Cd1 – xZnxTe solid solutions, an immiscibility gap within x = 0.4–0.6 at T = 400 K already revealed. For the ZnTe–HgTe material system the situation is more complicated. Here, mutual incorporation of components is energetically favorable only up to impurity levels and an immiscibility gap occurs at entire compositions range starting from T = 800 K temperature and below. In addition, our calculations show that for the CdZnHgTe quaternary material system the immiscibility gap exists at the mentioned above temperature range and decreases at temperature increasing. Presented results can be useful at the growth of multicomponent bulk crystals, epitaxial thin films and nanostructures based on CdZnHgTe material system.
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The authors wish to thank the State Committee of Science of Armenia for financial support in the framework of the grant no. 18T–2J016.
The authors declare no conflict of interest.
Translated by K.M. Gambaryan
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Gambaryan, K.M., Simonyan, A.K., Aroutiounian, V.M. et al. CdTe–ZnTe–HgTe Material System: Solid Solutions Miscibility Analysis. J. Contemp. Phys. 55, 334–338 (2020). https://doi.org/10.3103/S1068337220040088
- II-VI compound semiconductors
- Gibbs free energy
- miscibility analysis