Abstract
The pseudobinary HgTe–CdTe, ZnTe–CdTe and HgTe–ZnTe systems were studied and Gibbs energy of mixing were determined at 400–1000 K temperature range. Miscibility gap analysis for CdZnHgTe quaternary material system is also performed by the Gibbs free energy calculations. Quantitative explorations show that there is no immiscibility gap for CdTe–HgTe material system in the mentioned above temperature range. In spite of that system, for the Cd1 – xZnxTe solid solutions, an immiscibility gap within x = 0.4–0.6 at T = 400 K already revealed. For the ZnTe–HgTe material system the situation is more complicated. Here, mutual incorporation of components is energetically favorable only up to impurity levels and an immiscibility gap occurs at entire compositions range starting from T = 800 K temperature and below. In addition, our calculations show that for the CdZnHgTe quaternary material system the immiscibility gap exists at the mentioned above temperature range and decreases at temperature increasing. Presented results can be useful at the growth of multicomponent bulk crystals, epitaxial thin films and nanostructures based on CdZnHgTe material system.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
REFERENCES
Kasap, S. and Capper, P. (Eds.). Wide Bandgap II–VI Semiconductors: Growth and Properties. Springer Handbook of Electronics and Photonics Materials. Part B, 2007, p. 1.
Potlog, T., Maticiuc, N., Mirzac, A., Dumitriu, P., and Scortescu, D., CAS 2012 (International Semiconductor Conference), Sinaia, 2012, p. 321. https://doi.org/10.1109/SMICND.2012.6400772.
Duz, I., Erdem, S., Ozdemir Kart, S., and Kuzucu, V., Archives of Materials Science and Engineering, 2016, vol. 79, p. 5.
Wojtowicz, T., Janik, E. et al, Journal of the Korean Phys. Society, 2008, vol. 53, no. 5, p. 3055.
Rusu, G.I., Prepelita, P., Apetroaei, N. and Popa, G., Journal of Optoel. and Advan. Materials, 2005, vol. l7, no. 2, p. 829.
Seyam, M.A.M. and Elfalaky, A., Vacuum, 2000, vol. 57, no. 1, p. 31.
Su, C.-H., Sha, Y.-G., Mazuruk, K., and Lehoczky, S.L., J. Appl. Phys., 1996, vol. 80, no. 1, p. 137.
Alikhanian, A.S., Guskov, V.N., Natarovskii, A.M., and Kovalenko, V.V., Inorganic Materials, 2003, vol. 39, no. 3, p. 234.
Lawson, W.D., Nielson, S., Putley, E.H., and Young, A.S., J. Phys. Chem. Solids, 1959, vol. 9, p. 325.
Rogalski, A., Optoelectronics Review, 2010, vol. 18, no. 3, p. 284.
Ihsiu, H. and Stringfellow, G.B., Appl. Phys. Lett., 1996, vol. 69, no. 18, p. 2701.
Emeljanova, O.S., Strelchenko, S.S., and Usacheva, M.P., Semiconductors, 2009, vol. 43, no. 2, p. 135.
Deibuk, V.G., Semiconductors, 2003, vol. 37, no.10, p. 1151.
Vigdorovich, E.N. and Sveshnikov, Yu.N., Inorganic Materials, 2000, vol. 36, no. 5, p. 465.
Wakahara, A., Tokuda, T., Dang, X.-Z., Noda, S., and Sasaki, A., Appl. Phys. Lett., 1997, vol. 71, p. 906.
Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy: Theory and Practice, USA, San Diego: Elsevier, 1999.
Funding
The authors wish to thank the State Committee of Science of Armenia for financial support in the framework of the grant no. 18T–2J016.
Author information
Authors and Affiliations
Corresponding author
Ethics declarations
The authors declare no conflict of interest.
Additional information
Translated by K.M. Gambaryan
About this article
Cite this article
Gambaryan, K.M., Simonyan, A.K., Aroutiounian, V.M. et al. CdTe–ZnTe–HgTe Material System: Solid Solutions Miscibility Analysis. J. Contemp. Phys. 55, 334–338 (2020). https://doi.org/10.3103/S1068337220040088
Received:
Revised:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068337220040088