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Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

Based on the technology developed by authors of the local diffusion doping of certain parts of the ZnO film of the donor (Ga) and acceptor (Li) impurities, a transparent field-effect transistor with the n-type channel was manufactured. The MgF2 films were used as a gate insulator. The field effect and the dark electrical characteristics of the structures were investigated. The field phototransistors based on these structures have been developed. The photoelectric characteristics of the field phototransistors were investigated, and the mechanism of the photoelectric amplification was proposed.

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Acknowledgments

This work was financially supported by the Russian-Armenian University at the expense of the subsidies from the Ministry of Education and Science of the Russian Federation.

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Authors and Affiliations

  1. Russian-Armenian University, Yerevan, Armenia

    R. K. Hovsepyan, N. R. Aghamalyan, Y. A. Kafadaryan, A. A. Arakelyan, H. G. Mnatsakanyan & S. I. Petrosyan

  2. Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia

    R. K. Hovsepyan, N. R. Aghamalyan, Y. A. Kafadaryan, A. A. Arakelyan, H. G. Mnatsakanyan & S. I. Petrosyan

Authors
  1. R. K. Hovsepyan
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  2. N. R. Aghamalyan
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  3. Y. A. Kafadaryan
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  4. A. A. Arakelyan
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  5. H. G. Mnatsakanyan
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  6. S. I. Petrosyan
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Corresponding author

Correspondence to R. K. Hovsepyan.

Additional information

Russian Text © The Author(s), 2019, published in Izvestiya Natsional'noi Akademii Nauk Armenii, Fizika, 2019, Vol. 54, No. 3, pp. 384–395.

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Hovsepyan, R.K., Aghamalyan, N.R., Kafadaryan, Y.A. et al. Field-Effect Transistor Based on Zinc Oxide Using Diffusion Technology. J. Contemp. Phys. 54, 287–295 (2019). https://doi.org/10.3103/S1068337219030095

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  • DOI: https://doi.org/10.3103/S1068337219030095

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