Abstract
Intra-subband transitions caused by light absorption in a parabolic quantum well is considered taking into account the scattering by ionized impurity centers. To calculate the scattering matrix element, the Born approximation is used and the interaction with the impurity is described by the Coulomb potential. An analytical expression for the absorption coefficient of processes with the initial absorption of photon and further scattering by an ionized impurity center is obtained. For absorption coefficient the frequency characteristics and dependence on the width of quantum well are examined.
Similar content being viewed by others
References
Fan, H.Y., Spitzer, W., and Collins, R.J., Phys. Rev., 1956, vol. 2, p. 101.
Rosenberg, R. and Lax, M., Phys. Rev., 1958, vol. 12, p. 843.
Opticheskie yavleniya v opticheskikh kvanto-razmernykh strukturach (Photoelectrical Phenomena in Semiconductor and Quantum-Dimensional Structures), Ivchenko E. L. and Vorob’ev L. E., Eds., SPSTU, 2000.
Asano, T., Noda, S., and Sasaki, A., Physica E, 1998, vol. 2, p. 111.
Intersubband Transitions in Quantum Structures, Paella, R., ed., New York McGraw-Hill, 2006.
Helm, M., Semiconductors and Semimetals. The Basic Physics of Intersubband Transitions, 1999, vol. 62, Chapter 1, p. 59.
Alves, F.D.P., Karunasiri, G., Hanson, N., Byloos, M., Liu, H.C., Bezinger, A., and Buchanan. M., Infrared Phys. & Technol., 2007, vol. 50, p. 182.
Li, S.S., Int. J. High Speed Electr. Syst., 2002, vol. 12, p. 761.
Carter, S.G., Ciulin, V., Sherwin, M.S., Hanson, M., Huntington, A., Coldren, L.A., and Gossard, A.C., Appl. Phys. Lett., 2004, vol. 84, p. 840.
Iizuka, N., Kaneko, K., and Suzuki, N., IEEE J. Quantum Electr., 2006, vol. 42, p. 765.
Chakraborty, T. and Apalkov, V.M., Adv. Phys., 2003, vol. 52, p. 455.
Kazaryan, E.M., Gigoryan, V.G., and Kazaryan, A.M., IzvestiyaAN Arm. SSR, Fizika, 1976, vol. 11, p. 351.
Kazaryan, E.M. and Aramyan, K.C., Jzvestiya AN Arm. SSR, Fizika, 1976, vol. 11, p. 122.
Lee, J. and Spector, H.N., J. Appl. Phys., 1983, vol. 54, p. 3921.
Adamska, H. and Spector, H.N., J. Appl. Phys., 1984, vol. 56, p. 1123.
Kubakaddi, S.S. and Mulimani, B.G., J. Phys., 1986, vol. 19, p. 11300.
Bhat, J.S., Kubakaddi, S.S., and Mulimani, B.G., J. Appl. Phys., 1992, vol. 72, p. 4966.
Sankeshwar, N.S., Kubakaddi, S.S., and Mulimani, B.G., J. Phys., 1989, vol. 32, p. 149.
Gashimzade, F.M., Phys Stat. Sol. (b), 1990, vol. 160, p. 177.
Carosella, F., Ndebeka-Bandou, C., Ferreira, R., Dupont, E., Unterrainer, K., Strasser, G., Wacker, A., and Bastard, G., Phys. Rev. B, 2012, vol. 85, p. 085310.
Petrosyan, L.S., Jzvestiya NAN Armenii, Fizika, 2002, vol. 37, p. 173.
Hayrapetyan, O.B., Kazaryan, E.M., Petrosyan, L.S., and Sarkisyan, H.A., Physica E, 2015, vol. 66, p. 7.
Hayrapetyan, D.B., Kazaryan, E.M., Kotanjyan, T.V., and Tevosyan, H.K., Superlattices and Microstructures, 2015, vol. 78, p. 40.
Hayrapetyan, D.B., Kazaryan, E.M., and Tevosyan, H.K., Superlattices and Microstructures, 2013, vol. 64, p. 204.
Maksym, P.A. and Chakraborty, T., Phys. Rev. Lett., 1990, vol. 65, p. 108.
Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructures, Cedex France, Les Editions de Physique, pp. 237–295, 1989.
Seeger, K., Semiconductor Physics, Berlin, Heidelberg Springer-Verlag, 2004.
Kazaryan, E.M. and Petrosyan, S.G., Physical Basics ofSemiconductor Nanoelectronics (in Armenian), RA(S)U Publishing, Yerevan, 2005.
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.H. Gevorgyan, 2016, published in Izvestiya NAN Armenii, Fizika, 2016, Vol. 51, No. 1, pp. 70–78.
About this article
Cite this article
Gevorgyan, A.H. Free-carrier absorption in a parabolic quantum well with consideration of scattering on ionized impurities. J. Contemp. Phys. 51, 54–60 (2016). https://doi.org/10.3103/S1068337216010096
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068337216010096