Abstract
By the method of metal-organic chemical vapor deposition we have epitaxially grown effective samples of InAs/p-GaSb/n-GaSb/n-GaAs/In x Ga1−x As/Ge/Si(113) photovoltaic cells and investigated their photoelectric properties. The suitability of application of quality heterojunction diode structures in termophotovoltaic cells is experimentally proved.
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Original Russian Text © V.M. Aroutiounian, G.Sh. Shmavonyan, O.A. Zadoyan, K.M. Gambaryan, A.M. Zadoyan, 2014, published in Izvestiya NAN Armenii, Fizika, 2014, Vol. 49, No. 6, pp. 393–399.
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Aroutiounian, V.M., Shmavonyan, G.S., Zadoyan, O.A. et al. Investigation of photoelectrical properties of epitaxially grown heterojunction thermophotovoltaic cells. J. Contemp. Phys. 49, 258–263 (2014). https://doi.org/10.3103/S1068337214060036
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DOI: https://doi.org/10.3103/S1068337214060036