Abstract
Ferroelectric field-effect transistors using ZnO:Li films simultaneously as a transistor channel and as a ferroelectric active element have been prepared and studied. We show an opportunity of using the ferroelectric field-effect transistor based on ZnO:Li films in ZnO:Li/LaB6 heterostructure as a bistable memory element for information recording. The proposed structure of a ferroelectric memory cell does not possess the fatigue under repeated readout of single recorded information that will allow increasing the resource of storage devices essentially.
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Original Russian Text © N.R. Aghamalyan, T.A. Aslanyan, E.S. Vardanyan, E.A. Kafadaryan, R.K. Hovsepyan, S.I. Petrosyan, A.R. Poghosyan, 2013, published in Izvestiya NAN Armenii, Fizika, 2013, Vol. 48, No. 3, pp. 193–202.
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Aghamalyan, N.R., Aslanyan, T.A., Vardanyan, E.S. et al. Memory element based on ferroelectric field-effect transistor with use of ZnO:Li/LaB6 heterostructures. J. Contemp. Phys. 48, 128–133 (2013). https://doi.org/10.3103/S1068337213030067
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DOI: https://doi.org/10.3103/S1068337213030067