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Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors have been studied. The influence of defect complex caused by oxygen vacancy and interstitial zinc atom on the metal-insulator transition is considered. The peculiarities of this transition in ZnO films doped with donor or acceptor impurity and the influence of mentioned defect complex on the charge carrier transfer mechanism were investigated.

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Authors and Affiliations

  1. Institute for Physical Research, NAS of Armenia, Ashtarak, Armenia

    N. R. Aghamalyan, T. A. Aslanyan, E. S. Vardanyan, Y. A. Kafadaryan, R. K. Hovsepyan, S. I. Petrosyan & A. R. Poghosyan

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  1. N. R. Aghamalyan
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  2. T. A. Aslanyan
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  3. E. S. Vardanyan
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  4. Y. A. Kafadaryan
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  5. R. K. Hovsepyan
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  6. S. I. Petrosyan
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  7. A. R. Poghosyan
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Additional information

Original Russian Text © N.R. Aghamalyan, T.A. Aslanyan, E.S. Vardanyan, Y.A. Kafadaryan, R.K. Hovsepyan, S.I. Petrosyan, A.R. Poghosyan, 2012, published in Izvestiya NAN Armenii, Fizika, 2012, Vol. 47, No. 6, pp. 417–426.

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Aghamalyan, N.R., Aslanyan, T.A., Vardanyan, E.S. et al. Metal-insulator electronic phase transitions in wide-gap ZnO semiconductors. J. Contemp. Phys. 47, 275–281 (2012). https://doi.org/10.3103/S1068337212060059

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  • DOI: https://doi.org/10.3103/S1068337212060059

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