Abstract
Influence of the anodization parameters of porous silicon on its glucose sensitivity was investigated by measuring the current-voltage characteristics and resistance of samples. It is shown that the sensitivity increases sharply up to 5.5 times with increase in the anodization current density.
Similar content being viewed by others
References
Bisi, O., Ossicini, S., and Pavesi, L., Surf. Sci. Rep., 2000, vol. 38, p. 1.
Melikjanyan, G.A. and Martirosyan, Kh.S., J. Contemp. Phys. (Armenian Ac. Sci.), 2012, vol. 47, p. 189.
Yamani, Z., Thompson, W.H., et al., Appl. Phys. Lett., 1997, vol. 70, p. 6404.
Melikjanyan, G.A. and Martirosyan, Kh.S., Proc. 8th Int. Conf. Semiconductor Micro- and Nanoelectronics, Yerevan, Armenia, July 1–3, 2011, p. 137.
López-García, J., Martín-Palma, R.J., et al., Sens. Actuat. B, 2007, vol. 126, p. 82.
Recio-Sánchez, G., Torres-Costa, V., Manso, M., et al., Materials, 2010, vol. 3, p. 755.
Hovhannisyan, A.S., Aroutiounian, V.M., Martirosyan, Kh.S., and Galstyan, V.E., Armenian J. Phys., 2008, vol. 1, p. 34.
Author information
Authors and Affiliations
Additional information
Original Russian Text © G.A. Melikjanyan, Kh.S. Martirosyan, 2012, published in Izvestiya NAN Armenii, Fizika, 2012, Vol. 47, No. 4, pp. 294–297.
About this article
Cite this article
Melikjanyan, G.A., Martirosyan, K.S. Influence of anodization parameters of porous silicon on its glucose sensitivity. J. Contemp. Phys. 47, 193–195 (2012). https://doi.org/10.3103/S1068337212040081
Received:
Published:
Issue Date:
DOI: https://doi.org/10.3103/S1068337212040081