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Optimization of magnetron deposition process for formation of high-quality oriented ZnO films

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Journal of Contemporary Physics (Armenian Academy of Sciences) Aims and scope

Abstract

The thickness distribution and structure of ZnO films deposited by DC-magnetron sputtering of a zinc target in argon-oxygen gaseous medium at substrate temperature of 27°C and gas pressure in the chamber within 5×10−3 − 5×10−2 mm Hg was investigated. It was revealed that the use of a target with a certain depression in the sputtering zone allows depositing high quality c-oriented films at lower gas pressure than with a flat target. The dependence of film quality on geometric factors is interpreted on the basis of theoretical computations with the assumption that the film structure is improved when the flux of deposited Zn particles decreases while their energy increases.

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Authors and Affiliations

  1. State Engineering University of Armenia, Yerevan, Armenia

    E. R. Arakelova, A. M. Khachatryan, K. E. Avjyan & A. A. Kteyan

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  1. E. R. Arakelova
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  2. A. M. Khachatryan
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  3. K. E. Avjyan
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  4. A. A. Kteyan
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Additional information

Original Russian Text © E.R. Arakelova, A.M. Khachatryan, K.E. Avjyan, A.A. Kteyan, 2012, published in Izvestiya NAN Armenii, Fizika, 2012, Vol. 47, No. 4, pp. 277–287.

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Arakelova, E.R., Khachatryan, A.M., Avjyan, K.E. et al. Optimization of magnetron deposition process for formation of high-quality oriented ZnO films. J. Contemp. Phys. 47, 181–188 (2012). https://doi.org/10.3103/S1068337212040068

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  • DOI: https://doi.org/10.3103/S1068337212040068

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