Abstract
Effect of different irradiation (by electrons, neutrons, protons, and gamma) on the main properties of silicon-based semiconductor devices has been studied. A higher emphasis has been placed on transistors as the least radiation-stable structures. It is shown that under irradiation by protons the modification of corresponding parameters occurs at relatively lower doses. The results are explained on the basis of arising of surface channels of conductivity under irradiation.
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Original Russian Text © V.A. Sahakyan, 2008, published in Izvestiya NAN Armenii, Fizika, 2008, Vol. 43, No. 5, pp. 348–354.
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Sahakyan, V.A. Influence of different type irradiation on the parameters of silicon semiconductor devices. J. Contemp. Phys. 43, 226–230 (2008). https://doi.org/10.3103/S1068337208050034
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DOI: https://doi.org/10.3103/S1068337208050034