Abstract
Fluctuations of the semiconductor surface potential in a Si-SiO2 structure, caused by irradiation with different high-energy particles (50 MeV electrons and 40 keV arsenic ions) and subsequent annealing, have been studied by measuring the semiconductor interface state parameters. It is established that the fluctuation of the semiconductor surface potential decreases slightly, from 0.049 V to 0.044 V, after irradiation, while a considerable increase is observed after annealing. For the samples irradiated by arsenic ions, the increase in fluctuation is much larger (0.096 V) than that for the electron-irradiated samples (0.06 V).
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References
Mitchell, J.P. and Wilson, D.K., Bell System Tech. J., 1967, vol. XLVI, p. 1.
Snow, E.H., Growth, A.S., and Fitzgerald, D.J., TIIER, 1967, vol. 55, no. 7, p. 53.
Kulakov, V.M. and Ladygin, E.A., Deystviye pronikayushchey radiatsii na izdeliya elektronnoy tekhniki (Effect of Penetrating Radiation on Devices of Electronic Technics), Moscow: Sovetskoye Radio, 1980.
Gorban’, A.P., Litovchenko, V.G., and Moskal’, D.N., Ukr. fiz. zh., 1975, vol. 20, p. 2012.
Kozlov, V.A. and Kozlovskii, V.V., FTP, 2001, vol. 35, p. 769.
Antonova, I.V., Stuchinskii, V.A., et al., FTP, 2003, vol. 37, p. 1341.
Nikollian, E.H. and Goetzberger, A., Bell System Tech. J., 1967, vol. XLVI, p. 1055.
Zhdan, A.G., Kukharskaya, N.F., and Chucheva, G.V., FTP, 2003, vol. 37, p. 686.
Eritsyan, G.N., Mordkovich, V.N., Oganessyan, A.S., and Sahakyan, A.A., Crystal Lattice Defects and Amorphous Materials, 1987, vol. 14, p. 256.
Eritsyan, G.N., Oganessyan, A.S., and Sahakyan, A.A., Preprint YerPhI-447(54)-80, Yerevan, 1980.
Sze, S.M., Physics of Semiconductor Devices, New York, 1981.
Simonne, J.J., Solid-State Electronics, 1973, vol. 16, p. 121.
Eritsyan, G.N., Melkonyan, R.A., Sahakyan, A.A., et al., in Radiatsionniye defekti v poluprovodnikakh (Radiation Defects in Semiconductors), p. 52, Minsk: izd. BGU, 1972
Winokur, P.S., McGarrity, L.M., and Boesch, H.E., IEEE Trans. Nucl. Sc., 1976, vol. NS-23, p. 1580.
Vologdin, E.N., Zhukova, G.A., and Mordkovich, V.N., FTP, 1978, vol. 7, p. 835.
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Original Russian Text © A.A. Sahakyan, 2007, published in Izvestiya NAN Armenii, Fizika, 2007, Vol. 42, No. 6, pp. 382–388.
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Sahakyan, A.A. Fluctuation of semiconductor surface potential in Si-SiO2 structure after irradiation and subsequent annealing. J. Contemp. Phys. 42, 252–255 (2007). https://doi.org/10.3103/S1068337207060084
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DOI: https://doi.org/10.3103/S1068337207060084